ZIET BHUBANESWAR

SEMICONDUTOR DEVICES

CASE/ SOURCE BASED QUESTIONS

SL Read the passage given below and answer the following questions

1 The device used for convertion of AC to DC is called rectifier. Usually crystal diode are used in rectifier. The output of the
rectifier is not 100% DC but consists of pulsating voltage. To reduce it again it will fed to filter circuit.

(i) The property of crystal diode which makes it suitable for rectification is (a) made of semiconductor

(b) Unidirectional flow of current

(c) Less current in reverse bias

(d) After knee voltage it expontially increase.

(ii) Capacitor is used in filter circuit because

(a) It allow DC

(b) It connect series with load resistor

(c) The pulsating AC can easily passed through capacitor

(d)None of above

(iii) The efficiency of rectifier is more when

(a) one diode is used

(b) two diode used in series

(c)two diode used in parallel

(d) one diode and a capacitor connected in parallel.

2 LED is forward biased p-n junction diode which emit spontaneous radiation. The amount of energy released is less than or
equal to band gap. The V-I characteristic graph is like forward biased p-n junction.

(i) The energy release due to

(a)Recombition of electron and hole

(b) Due to forward biased voltage

(c) Excitation of electron from high to low energy level

(d) movement of hole

(ii) GaAs (Eg=1.4eV) is used for

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(a) Red LED

(b) Infrared LED

(c)Ultrviolet LED

(d) Green LED

(iii)Which of the following is not the advantage of LED.

(a)Low operational voltage

(b)Fast on-off switching capacity

(c)Fast action

(d) More power

3 Band theory of solid:

Consider that the Si or Ge crystal contains N atoms. Electrons of each atom will have discrete energies in
different orbits. The electron energy will be same if all the atoms are isolated, i.e., separated from each
other by a large distance. However, in a crystal, the atoms are close to each other (2 Å to 3 Å) and
therefore the electrons interact with each other and also with the neighbouring atomic cores. The overlap
(or interaction) will be more felt by the electrons in the outermost orbit while the inner orbit or core
electron energies may remain unaffected. Therefore, for understanding electron energies in Si or Ge
crystal, we need to consider the changes in the energies of the electrons in the outermost orbit only. For
Si, the outermost orbit is the third orbit (n = 3), while for Ge it is the fourth orbit (n = 4). The number of
electrons in the outermost orbit is 4 (2s and 2p electrons). Hence, the total number of outer electrons in
the crystal is 4N. The maximum possible number of outer electrons in the orbit is 8 (2s + 6p electrons).
So, out of the 4N electrons, 2N electrons are in the 2N s-states (orbital quantum number l = 0) and 2N
electrons are in the available 6N p-states. Obviously, some p-electron states are empty. This is the case of
well separated or isolated atoms.

Q. 1.1 The energy of electrons of atoms of a substance will be same if:

(A) atoms are isolated.
(B) atoms are closely spaced.
(C) atoms are excited.
(D) atoms are charged.

Q.1.2 In a crystal, the distance between two atoms is:

(A) 200 Å to 300 Å
(B) 2 Å to 3 micron
(C) 2 Å to 3 Å
(D) 2 mm to 3 mm

Q.1.3. The overlap (or interaction) will be more felt by the electrons when they are:
(A) in the outermost orbit.

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(B) in the innermost orbit.
(C) free.
(D) in any orbit.

Q. 1.4. For Silicon and Germanium the outermost orbits are respectively:
(A)n = 3 and n = 5
(B) n = 4 and n = 3
(C) n = 5 and n = 4
(D)n = 3 and n = 4

Q. 1.5. The maximum possible electrons in an orbit is:

(A) 8 (2s + 6p electrons)
(B) 8 (6s + 2p electrons)
(C) 8 (4s + 4p electrons
(D)8 (1s + 7p electrons)

4 Light Emitting Diode:

It is a heavily doped p-n junction which under forward bias emits spontaneous radiation. The
diode is encapsulated with a transparent cover so that emitted light can come out. When the diode
is forward biased, electrons are sent from n → p (where they are minority carriers) and holes are
sent from p → n (where they are minority carriers). At the junction boundary, the concentration
of minority carriers increases as compared to the equilibrium concentration (i.e., when there is no
bias). Thus at the junction boundary on either side of the junction, excess minority carriers are
there which recombine with majority carriers near the junction. On recombination, the energy is
released in the form of photons. Photons with energy equal to or slightly less than the band gap
are emitted. When the forward current of the diode is small, the intensity of light emitted is small.
As the forward current increases, intensity of light increases and reaches a maximum. Further
increase in the forward current results in decrease of light intensity. LED's are biased such that
the light emitting efficiency is maximum The V-I characteristics of a LED is similar to that of a
Si junction diode. But, the threshold voltages are much higher and slightly different for each
colour. The reverse breakdown voltages of LED's are very low, typically around 5 V. So care
should be taken that high reverse voltages do not appear across them. LED's that can emit red,
yellow, orange, green and blue light are commercially available.

Q.2.1. LED is a:
(A) Lightly doped p-n junction diode.
(B) Heavily doped p-n junction diode.
(C) Moderately doped p-n junction diode.
(D) Two back to back p-n junction diode.

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Q.2.2. LED emits light:
(A) when reversed biased?
(B) When forward biased.
(C) When forward or reverse biased.
(D) When heated.

. Q.2.3. During recombination at the junction, emitted photons have:

(A) Energy greater than the band gap.
(B) Energy equal to or slightly less than the band gap.
(C) Energy which has no relation with the band gap.
(D) Very low energy compared to band gap.

Q.2.4. Threshold voltage of LED is:

(A) lower compared to other p-n junction diodes and slightly different for each colour.
(B) Higher compared to other p-n junction diodes and slightly different for each colour.
(C) Higher compared to other p-n junction diodes and same for all colours.
(D) lower compared to other p-n junction diodes and same for all colours.

Q. 2.5. The reverse breakdown voltages of LED's are:

(A)very low and typically around 0.5 V.
(B) very low and typically around 5 V.
(C) very high and typically around 50 V.
(D)very low and typically around 0.05 V.

5 A solar cell is basically a p-n junction which generates emf when solar radiation falls on the p-n junction.
It works on the same principle (photovoltaic effect) as the photodiode, except that no external bias is
applied and the junction area is kept much larger for solar radiation to be incident because we are
interested in more power. A p-Si wafer of about 300 μm is taken over which a thin layer (~0.3 μm) of n-
Si is grown on one-side by diffusion process. The other side of p-Si is coated with a metal (back contact).
On the top of n-Si layer, metal finger electrode (or metallic grid) is deposited. This acts as a front
contact. The metallic grid occupies only a very small fraction of the cell area (<15%) so that light can be
incident on the cell from the top. The generation of emf by a solar cell, when light falls on, it is due to the
following three basic processes: generation, separation and collection—
generation of e-h pairs due to light (with hν > E).

1)Working principle of solar cell is same as:

a) Photodiode

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b) Zener diode
c) LED
d) Half wave rectifier

2) Which type of external biasing is applied in Solar cell?

a) Forward
b) Reverse
c) both (a) and (b)
d) No external biasing is applied

3) Which of the following is true for a solar cell?

a) hv < E
b) hv>E
c) E = hv
d) None of these

4) What is the principle of Solar cell?

a) Photodiode
b) Zener diode
c) LED
d) Photovoltaic Effect

5) In a solar cell,
a) Junction area is large
b) Junction area is small
c) Junction area is negligible
d) None of these
6 Zener diode is fabricated by heavily doping both p and n sides of the junction. Due to this, depletion
region formed is very thin (<10–6 m) and the electric field of the junction is extremely high (~5×106
V/m) even for a small reverse bias voltage of about 5V. It is seen that when the applied reverse bias
voltage(V) reaches the breakdown voltage (Vz) of the Zener diode, there is a large change in the current.
Note that after the breakdown voltage Vz, a large change in the current can be produced by almost
insignificant change in the reverse bias voltage. In other words, Zener voltage remains constant, even
though current through the Zener diode varies over a wide range. This property of the Zener diode is

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used for regulating supply voltages so that they are constant.

1 ) Zener diode is:

a) Heavily doped
b) lightly doped
c) not doped
d) None of these

2) After breakdown voltage ,

a) a small current is produced
b) there is no change in current
c) a large current is produced
d) None of these
3) Main use of Zener Diode is in :
a) voltage regulator
b) optoelectronic devices
c) solar cells
d) None of these
4) Depletion region of Zener Diode is :
a) very thick
b) very thin
c) thin
d) thick
5) Zener diode is used in
a) forward biased
b) reverse biased
c) not biased
d) both
7 We know how a semiconductor diode behaves under applied electrical inputs. Now we will learn about
semiconductor diodes in which carriers are generated by photons (photo-excitation). All these devices
are called optoelectronic devices. They are-

● Photodiodes used for detecting optical signal (photodetectors).

● Light emitting diodes (LED) which convert electrical energy into light.
● Photovoltaic devices which convert optical radiation into electricity (solar cells)

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(i) In Photodiodes electron-hole pairs are generated due to-
(A) absorption of protons
(B) absorption of photons
(C) absorption of muons
(D) absorption of electrons

(ii) Light emitting diode is a-

(A) Heavily doped p-n junction
(B) Lightly doped p-n junction
(C) Moderately doped p-n junction
(D) None of these

(iii) The reverse breakdown voltages of LEDs are nearly around

(A) 50V
(B) 5.0V
(C) 0.5V
(D) 0.05V

(iv) A solar cell works in

(A) Forward Biased
(B) Reverse Biased
(C) Unbiased
(D) Both A and C

8 If an alternating voltage is applied across a diode in series with a load and a pulsating voltage will appear
across the load only during the half cycles of the ac input during which the diode is forward biased. Such
rectifier circuit is called a half-wave rectifier. The reverse saturation current of a diode is negligible and
can be considered equal to zero for practical purposes.

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(i) If input frequency of signal in half wave rectifier is 50 Hz then the output frequency will be
(A) 25 Hz
(B) 50 Hz
(C) 100 Hz
(D) Uncertain

(ii) If input frequency of signal in full wave rectifier is 50 Hz then the output frequency will be
(A) 25 Hz
(B) 50 Hz
(C) 100 Hz
(D) Uncertain

(iii) Rectifier converts-

(A) AC to DC
(B) DC to AC
(C) AC to AC of different waveform
(D) All of these

(iv) Full wave rectifier can be used over half wave rectifier because Full wave rectifier is-
(A) More energy efficient
(B) More energy consuming
(C) More handy to use
(D) More cost effective to manufacture

9 Consider a thin p-type silicon (p-Si) semiconductor wafer. By adding precisely a small quantity of
pentavalent impurity, part of the p-Si wafer can be converted into n-Si. There are several processes by
which a semiconductor can be formed. The wafer now contains p-region and n- region and a
metallurgical junction between p-, and n- region. Two important processes occur during the formation
of a p-n junction: diffusion and drift. We know that in an n-type semiconductor, the concentration of
electrons (number of electrons per unit volume) is more compared to the concentration of holes.
Similarly, in a p-type semiconductor, the concentration of holes is more than the concentration of
electrons. During the formation of p-n junction, and due to the concentration gradient across p-, and n-
sides, holes diffuse from p- side to n-side (p → n) and electrons diffuse from n-side to p-side (n → p).
This motion of chargecarries gives rise to diffusion current across the junction.

1) How can a p-type semiconductor be converted into n- type semiconductor?

a) adding pentavalent impurity

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b) adding trivalent impurity

c) not possible

d) heavy doping

2) How can a p-type semiconductor be converted into n- type semiconductor?

a) adding pentavalent impurity

b) adding trivalent impurity

c) not possible

d) heavy doping

3. Which of the following is true about p type semiconductor?

a) concentration of electrons is less than that of holes.

b)concentration of electrons is more than that of holes.

c)concentration of electrons equal to that of holes.

d)None of these

4 . Which of the following is the reason about diffusion current?

a) diffusion of holes from p to n

b)diffusion of electronss from n to p

c) both (a) and (b)

d) None of these

10 A Photodiode is again a special purpose p-n junction diode fabricated with a transparent window to allow
light to fall on the diode. It is operated under reverse bias. When the photodiode is illuminated with light
(photons) with energy (hν) greater than the energy gap (E) of the semiconductor, then electron- hole
pairs are generated due to the absorption of photons. The diode is fabricated such that the generation of
e-h pairs takes place in or near the depletion region of the diode. Due to electric field of the junction,
electrons and holes are separated before they recombine. The direction of the electric field is such that
electrons reach n-side and holes reach p-side. Electrons are collected on n-side and holes are collected on
p-side giving rise to an emf. When an external load is connected, current flows. The magnitude of the
photocurrent depends on the intensity of incident light.

1) PHOTO DIODE IS A
a) forward biased b) reverse biased c) Not biased d) None of these

2) Which of the following is true about photodiode?

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a) E > hv b) E = hv c) E < hv d) None of these

3) Magnitude of photocurrent depends on

a) Intensity of light b) Biasing c) Potential d) None of these

4)Electrons and holes are separated before they recombine by:

a) Diffusion current b) Drift current c) Electric field d) Electric potential

11 A semiconductor diode is basically a p-n junction with metallic contacts provided at the ends for the
application of an external voltage. It is a two terminal device. The direction of arrow in the symbol of p-n
junction diode indicates the conventional direction of current. The equilibrium barrier potential can be
altered by applying an external voltage V across the diode.

1) Under forward bias

(a) the applied voltage mostly drops across the depletion region.
(b) the applied voltage mostly drops across the p-side and n-side of the junction
(c) the depletion layer width increases
(d) the barrier height increases.
2) The total diode forward current is
(a) Sum of hole diffusion current and conventional current due to electron diffusion.
(b) Of the order of
(c) Equal hole diffusion current
(d) Conventional current due to electron diffusion.

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12 Read the passage given below and answer the following questions……..

A light emitting diode (LED) is a forward biased p-n junction diode That emits visible light when
energized. LED work on the phenomenon of electroluminescence. The colour of light emitted depends
on the semiconducting-material-used. When light emitting diodes are forward biased, the electrons from
the n-type material cross the p-n junction and recombine with holes in the p-type material. These free
electrons are in the conduction band and at a higher energy level than the holes in the valence band. The
recombination of electrons releases energy in the form of heat and light. In Germanium and Silicon
diodes, almost the entire energy is given up in the form of heat and emitted light is in IR region. But, in
materials like Arsenide, Gallium Phosphate the number of photons of light energy is emitted which is
sufficient to produce intense visible light.

1) LED is a –
(a) Lightly doped p-n junction diode
(b) heavily doped p-n junction diode
(c) moderately doped p-n junction diode
(d) two back to back doped p-n junction diode
2) LED emits light:-
(a) When reversed biased
(b) When forward biased
(c) When forward or reversed biased
(d) When heated

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13 Light Emitting Diode (LED):

A light-emitting diode (LED) is a semiconductor light source that emits light when current flows through
it. Electrons in the semiconductor recombine with electron holes, releasing energy in the form of
photons. The color of the light (corresponding to the energy of the photons) is determined by the energy
required for electrons to cross the band gap of the semiconductor. White light is obtained by using
multiple semiconductors or a layer of light-emitting phosphor on the semiconductor device. The diode is
encapsulated with a transparent cover so that emitted light can come out.

1) LED is a:

(A) lightly doped p-n junction diode.

(B) highly doped p-n junction diode.

(C) moderately doped p-n junction diode.

(D) two back-to-back p-n junction diodes.

2) I-V characteristics of an LED is

(A)

(B)

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(C)

(D)

3) The band gap of a semiconducting material to be used as LED is 1.8 eV. What will be the color of
emitted light?

(A) Blue

(B) Yellow

(C) Red

(D) Green

4) The reverse breakdown voltages of LED's are:

(A) very low and typically around 0.5 V.

(B) low and typically around 5 V.

(C) very high and typically around 50 V.

(D) very low and typically around 0.05 V.

5) LEDs are preferred over conventional incandescent low power lamps, because

(A) Low operational voltage and less power.

(B) Fast action and no warm-up time required.

(C) Both the above.

(D) None of the above.

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14 Solar Cell:

A solar cell is an electrical device (p-n junction) that converts the energy of light directly into electricity
by the photovoltaic effect, which is a physical and chemical phenomenon. It is a form of photoelectric
cell, defined as a device whose electrical characteristics, such as current, voltage, or resistance, vary
when exposed to light. Individual solar cell devices are often the electrical building blocks of
photovoltaic modules, known colloquially as solar panels.

1) Solar cell works on

(A) Forward bias.

(B) Reverse bias

(C) No bias

(D) It does not matter.

2) The important criteria for the selection of a material for solar cell fabrication is

(A) band gap (~1.0 to 1.8 eV).

(B) high optical absorption (~104 cm–1).

(C) Both.

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(D) None of the above.

3) The given graph represents V-I characteristics of a semiconductor device. Which of the following
statement is correct?

(A) It is V-I characteristics for a solar cell where A represents open circuit voltage and B represents short
circuit current.

(B) It is for a solar cell and A and B represents open circuit voltage and current respectively.

(C) It is for a photo diode and A and B represents open circuit voltage and current respectively.

(D) It is V-I characteristics for an LED where A represents open circuit voltage and B represents short
circuit current.

4) Which of the following materials cannot be used as solar cells materials?

(A) Si

(B) GaAs

(C) CdS

(D) PbS

5) During the collection of e-h pairs, holes are collected by

(A) Front contact

(B) Back contact

(C) Si-wafer

(D) Finger electrodes

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KEY

PASSAGE NO KEY

1 (i)(b)Unidirectional flow of current

(ii) the pulsating Ac can easily passed through capacitor.

(iii)(c) two diode are used in parallel

2 (i)(a) recombination of electron and hole.

(ii)(b) Infrared LED

(iii)(d) More power

3 1.1.Option (A) is correct.

1.2 Option (C) is correct

1.3 Option (A) is correct.

1.4 Option (D) is correct

1.5 Option (A) is correct

4 2.1 Option (B) is correct.

2.2 Option (B) is correct

2.3 Option (B) is correct.

2.4 Option (B) is correct.

2.5. Option (B) is correct

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5 1. a
2. d
3. b
4. d
5. a

6 1) a
2) c
3) a
4) b
5) b

7 1) B
2) A
3) B
4) C

8 1) B
2) C
3) A
4) A

9 1) A
2) B
3) A
4) C

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10 1) B
2) C
3) A
4) C

11 1) A
2) A

12 1) B
2) A

13 1. (B)
2. (D)
3. (C)
4. (B)
5. (C)

14 1. C
2. C
3. C
4. D
5. B

PREPARED BY :

PGTs OF BHUBANESWAR, GUWAHATI,KOLKOTA

,RANCHI,SILCHAR,TINSUKIA regions.

VETTED BY

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