HMC413QS16G / 413QS16GE

v04.0505
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz

Typical Applications Features

This amplifier is ideal for use as a power/driver Gain: 23 dB
amplifier for 1.6 - 2.2 GHz applications: Saturated Power: +29.5 dBm
• Cellular / PCS / 3G 42% PAE
• Portable & Infrastructure Supply Voltage: +2.75V to +5V
• Wireless Local Loop Power Down Capability
11 Low External Part Count
Included in the HMC-DK002 Designer’s Kit
LINEAR & POWER AMPLIFIERS - SMT

Functional Diagram General Description

The HMC413QS16G & HMC413QS16GE are high
efficiency GaAs InGaP Heterojunction Bipolar Tran-
sistor (HBT) MMIC Power amplifiers which operate
between 1.6 and 2.2 GHz. The amplifier is packaged
in a low cost, surface mount 16 leaded package with
an exposed base for improved RF and thermal perfor-
mance. With a minimum of external components, the
amplifier provides 23 dB of gain, +29.5 dBm of satu-
rated power at 42% PAE from a +5V supply voltage.
The amplifier can also operate with a 3.6V supply. Vpd
can be used for full power down or RF output power/
current control.

Electrical Specifi cations, TA = +25° C, As a Function of Vs, Vpd = 3.6V

Vs= 3.6V Vs= 5V
Parameter Frequency Units
Min. Typ. Max. Min. Typ. Max.
1.6 - 1.7 GHz 18 21 19 22 dB
1.7 - 2.0 GHz 19 22 20 23 dB
Gain
2.0 - 2.1 GHz 18 21 19 22 dB
2.1 - 2.2 GHz 17 20 18 21 dB
Gain Variation Over Temperature 1.6 - 2.2 GHz 0.025 0.035 0.025 0.035 dB/°C
Input Return Loss 1.6 - 2.2 GHz 10 10 dB
Output Return Loss 1.6 - 2.2 GHz 8 9 dB
1.6 - 1.7 GHz 20 23 23 26 dBm
Output Power for 1 dB Compression (P1dB)
1.7 - 2.2 GHz 21 24 24 27 dBm
1.6 - 1.7 GHz 25.5 28.5 dBm
Saturated Output Power (Psat)
1.7 - 2.2 GHz 26.5 29.5 dBm
1.6 - 1.7 GHz 32 35 36 39 dBm
Output Third Order Intercept (IP3) 1.7 - 2.0 GHz 33 36 37 40 dBm
2.0 - 2.2 GHz 32 35 36 39 dBm
Noise Figure 1.6 - 2.2 GHz 5.5 5.5 dB
Supply Current (Icq) Vpd= 0V/3.6V 0.002/220 0.002/270 mA
Control Current (Ipd) Vpd= 3.6V 7 7 mA
Switching Speed tON, tOFF 80 80 ns

For price, delivery,

Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders, please contact Hittite and to placeCorporation:
Microwave orders: Analog Devices, Inc.,
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
11 - 50 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343
781-329-4700Fax: 978-250-3373
• Order
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are the property of their respective owners.
Order On-line at www.hittite.com
HMC413QS16G / 413QS16GE
v04.0505
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz

Gain vs. Temperature, Vs= 3.6V Gain vs. Temperature, Vs= 5V

30 30

25 25

20 20
GAIN (dB)

GAIN (dB)
15 15

10
+25 C
+85 C
-40 C
10
+25 C
+85 C
-40 C 11
5 5

LINEAR & POWER AMPLIFIERS - SMT

0 0
1.3 1.5 1.7 1.9 2.1 2.3 2.5 1.3 1.5 1.7 1.9 2.1 2.3 2.5
FREQUENCY (GHz) FREQUENCY (GHz)

Return Loss, Vs= 3.6V Return Loss, Vs= 5V

0 0

S11
-4 -4
S22
RETURN LOSS (dB)

RETURN LOSS (dB)

-8 -8

-12 -12

S11
-16 -16
S22

-20 -20
1.3 1.5 1.7 1.9 2.1 2.3 2.5 1.3 1.5 1.7 1.9 2.1 2.3 2.5
FREQUENCY (GHz) FREQUENCY (GHz)

P1dB vs. Temperature, Vs= 3.6V P1dB vs. Temperature, Vs= 5V

32 32

28 28

24 24
P1dB (dBm)

P1dB (dBm)

20 20

16 +25 C
16 +25 C
+85 C +85 C
12 -40 C 12 -40 C

8 8

4 4

0 0
1.3 1.5 1.7 1.9 2.1 2.3 2.5 1.3 1.5 1.7 1.9 2.1 2.3 2.5
FREQUENCY (GHz) FREQUENCY (GHz)

For price, delivery,

Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders, please contact Hittite and to placeCorporation:
Microwave orders: Analog Devices, Inc.,
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
20 Alpha Road, Chelmsford, MA 01824 Phone: Phone:978-250-3343
781-329-4700Fax:
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. 978-250-3373
• Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are the property of their respective owners.
11 - 51
Order On-line at www.hittite.com
HMC413QS16G / 413QS16GE
v04.0505
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz

Psat vs. Temperature, Vs= 3.6V Psat vs. Temperature, Vs= 5V

32 32

28 28

24 24

20 20
Psat (dBm)

Psat (dBm)
16 +25 C
16 +25 C

11
+85 C +85 C
12 -40 C 12 -40 C

8 8

4 4
LINEAR & POWER AMPLIFIERS - SMT

0 0
1.3 1.5 1.7 1.9 2.1 2.3 2.5 1.3 1.5 1.7 1.9 2.1 2.3 2.5
FREQUENCY (GHz) FREQUENCY (GHz)

Power Compression@ 1.9 GHz, Vs= 3.6V Power Compression@ 1.9 GHz, Vs= 5V
46 46
42 42
Pout (dBm), GAIN (dB), PAE (%)

Pout (dBm), GAIN (dB), PAE (%)

38 Pout (dBm) 38 Pout (dBm)

Gain (dB) Gain (dB)
34 PAE (%) 34 PAE (%)
30 30
26 26
22 22
18 18
14 14
10 10
6 6
2 2
-12 -10 -8 -6 -4 -2 0 2 4 6 8 10 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14
INPUT POWER (dBm) INPUT POWER (dBm)

Output IP3 vs. Temperature, Vs= 3.6V Output IP3 vs. Temperature, Vs= 5V
42 44

38 40

34 36

30 32
IP3 (dBm)
IP3 (dBm)

26 +25 C
28 +25 C
+85 C +85 C
22 -40 C 24 -40 C

18 20

14 16

10 12
1.3 1.5 1.7 1.9 2.1 2.3 2.5 1.3 1.5 1.7 1.9 2.1 2.3 2.5
FREQUENCY (GHz) FREQUENCY (GHz)

Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,
For price, delivery, and to place orders, please contact delivery,
Hittite and to placeCorporation:
Microwave orders: Analog Devices, Inc.,
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
11 - 52 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. 781-329-4700Fax: 978-250-3373
• Order online at www.analog.com
Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
HMC413QS16G / 413QS16GE
v04.0505
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz

Reverse Isolation
vs. Temperature, Vs= 3.6V Power Down Isolation, Vs= 3.6V
0 0

-10 -10

-20
ISOLATION (dB)

ISOLATION (dB)
+25 C -20
+85 C
-30 -40 C
-30

11
-40
-40
-50

-60 -50

LINEAR & POWER AMPLIFIERS - SMT

-70 -60
1.3 1.5 1.7 1.9 2.1 2.3 2.5 1.3 1.5 1.7 1.9 2.1 2.3 2.5
FREQUENCY (GHz) FREQUENCY (GHz)

Noise Figure vs. Temperature, Vs= 3.6V Noise Figure vs. Temperature, Vs= 5V
10 10

8 8
NOISE FIGURE (dB)

NOISE FIGURE (dB)

6 6

4 4

+25 C +25 C
2 +85 C 2 +85 C
-40 C -40 C

0 0
1.5 1.7 1.9 2.1 2.3 2.5 1.5 1.7 1.9 2.1 2.3 2.5
FREQUENCY (GHz) FREQUENCY (GHz)

Gain & Power vs. Gain, Power & Quiescent Supply

Supply Voltage @ 1.9 GHz Current vs. Vpd @ 1.9 GHz, Vcc = +3.6V
30 34 28 330
GAIN (dB), P1dB (dBm), Psat (dBm)

29 32

28 Gain 30 25 Icq 270

27 28
P1dB, Psat (dBm)
GAIN (dB)

26 26 22 210
Icq (mA)

25 24

24 22 19 150

23 20
Gain
22 18 16 P1dB 90
P1dB Psat
21 Psat 16

20 14 13 30
2.75 3.25 3.75 4.25 4.75 5.25 1.5 1.75 2 2.25 2.5 2.75 3 3.25 3.5
Vcc SUPPLY VOLTAGE (Vdc) Vpd (Vdc)

For price,
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders, please contact delivery,
Hittite and to placeCorporation:
Microwave orders: Analog Devices, Inc.,
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
20 Alpha Road, Chelmsford, MA 01824 Phone: Phone:978-250-3343
781-329-4700Fax:
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
978-250-3373
• Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
11 - 53
Order On-line at www.hittite.com
HMC413QS16G / 413QS16GE
v04.0505
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz

Absolute Maximum Ratings

Collector Bias Voltage (Vcc) +5.5 Vdc
Control Voltage (Vpd1, Vpd2) +4.0 Vdc ELECTROSTATIC SENSITIVE DEVICE
RF Input Power (RFIN)(Vs = +5Vdc, OBSERVE HANDLING PRECAUTIONS
+15 dBm
Vpd = +3.6 Vdc)
Junction Temperature 150 °C
Continuous Pdiss (T = 85 °C)
1.56 W

11 (derate 24 mW/°C above 85 °C)

Thermal Resistance
(junction to ground paddle)
42 °C/W

Storage Temperature -65 to +150 °C

LINEAR & POWER AMPLIFIERS - SMT

Operating Temperature -40 to +85 °C

Outline Drawing

NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS].
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.

Package Information
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
[1] HMC413
HMC413QS16G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1
XXXX
[2] HMC413
HMC413QS16GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX

For price, delivery,

Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders, please contact Hittite and to placeCorporation:
Microwave orders: Analog Devices, Inc.,
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
11 - 54 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343
781-329-4700Fax: 978-250-3373
• Order
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are the property of their respective owners.
Order On-line at www.hittite.com
HMC413QS16G / 413QS16GE
v04.0505
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz

Pin Descriptions
Pin Number Function Description Interface Schematic

Ground: Backside of package has exposed metal ground slug that

1, 2, 4, 5, 7, 8,
GND must be connected to ground thru a short path. Vias under the device
9, 10, 13, 15
are required.

3, 14 Vpd1, Vpd2
Power Control Pin. For maximum power, this pin should be connected
to 3.6V. For 5V operation, a dropping resistor is required. A higher
11
voltage is not recommended. For lower idle current, this voltage can
be reduced.

LINEAR & POWER AMPLIFIERS - SMT

6 RFIN This pin is AC coupled and matched to 50 Ohms from 1.6 to 2.2 GHz.

11, 12 RFOUT RF output and bias for the output stage.

Power supply voltage for the first amplifier stage. An external bypass
16 Vcc
capacitor of 330 pF is required as shown in the application schematic.

For price, delivery,

Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders, please contact Hittite and to placeCorporation:
Microwave orders: Analog Devices, Inc.,
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
20 Alpha Road, Chelmsford, MA 01824 Phone: Phone:978-250-3343
781-329-4700Fax: 978-250-3373
• Order
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are the property of their respective owners.
11 - 55
Order On-line at www.hittite.com
HMC413QS16G / 413QS16GE
v04.0505
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz

Evaluation PCB

11
LINEAR & POWER AMPLIFIERS - SMT

* For 5V operation on Vctl line,

select R1, R2 such that 3.6V is
presented on Pins 3 and 14.

List of Materials for Evaluation PCB 105000 [1]

Item Description The circuit board used in the final application should
J1 - J2 PCB Mount SMA RF Connector use RF circuit design techniques. Signal lines
J3 2 mm DC Header should have 50 ohm impedance while the package
C1 2.2 pF Capacitor, 0603 Pkg. ground leads and exposed paddle should be con-
C2 10 pF Capacitor, 0402 Pkg. nected directly to the ground plane similar to that
C3 - C4 330 pF Capacitor, 0603 Pkg.
shown. A sufficient number of via holes should be
C5 2.2 μF Capacitor, Tantalum
used to connect the top and bottom ground planes.
L1 16 nH Inductor 0603 Pkg.
The evaluation board should be mounted to an
HMC413QS16G / HMC413QS16GE
appropriate heat sink. The evaluation circuit board
U1
Amplifier shown is available from Hittite upon request.
PCB [2] 105018 Eval Board
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350

For price, delivery,

Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders, please contact Hittite and to placeCorporation:
Microwave orders: Analog Devices, Inc.,
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
11 - 56 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343
781-329-4700Fax: 978-250-3373
• Order
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are the property of their respective owners.
Order On-line at www.hittite.com
HMC413QS16G / 413QS16GE
v04.0505
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz

Application Circuit

11

LINEAR & POWER AMPLIFIERS - SMT

TL1 TL2 TL3
Impedance 50 Ohm 50 Ohm 50 Ohm
Length 0.1” 0.15” 0.1”

* For 5V operation on Vctl line, select R1, R2 such that 3.6V is presented on Pins 3 and 14.

For price, delivery,

Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders, please contact Hittite and to placeCorporation:
Microwave orders: Analog Devices, Inc.,
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
20 Alpha Road, Chelmsford, MA 01824 Phone: Phone:978-250-3343
781-329-4700Fax: 978-250-3373
• Order
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are the property of their respective owners.
11 - 57
Order On-line at www.hittite.com