538 S20 Lecture 1 Introduction
538 S20 Lecture 1 Introduction
538 S20 Lecture 1 Introduction
Optoelectronic Devices
(Spring 2020)
Yong-Hang Zhang
Other references:
• Simon M. Sze, Physics of Semiconductor Devices, 2nd Edition, John Wiley & Sons, Inc., 1981
• E. Fred Schubert, Light-Emitting Diodes, 2nd Edition, Cambridge University Press, 2006
• Pallab Bhattacharya, Semiconductor Optoelectronic Devices, 2nd Edition, Prentice-Hall, 1997.
• Jasprit Singh, Electronic and of Optoelectronic Properties of Semiconductor Structures, Cambridge University
Press, 2003
• Many original journal papers and articles
Course Objectives
Si
Ge GaAs
From http://www.ioffe.ru/SVA/NSM/Semicond/GaAs/index.html
Objectives
• Understand the basic assumptions of the single
electron approximation
• Understand the basic assumptions of the effective
mass approximation
• Understand the origin of the bandgap in solid-state
materials
• Understand the basic concept of tight-binding model
and its application to deriving bandgaps of periodic
structures
• Understand the basic reason why electrons have
very high mobility in semiconductors
Fundamentals of Solid State Physics
Quantum Mechanics Review
Basic experimental observations:
Photon Electron
2
c 1 2 p
E hν h pc E mv
λ 2 2m
h
p k
λ
h h h h
p k
c p 2mE
Fundamentals of Solid State Physics
Schrödinger Equations
Time-dependent:
2 2
[ V ( r, t )] ( r, t ) i ( r, t )
2m t
2 : Laplacian Operator
Time-independent:
2 2
[ V ( r )] ( r ) E ( r )
2m
( r, t ) ( r )e iEt /
Fundamentals of Solid State Physics
Wave function: ( x ) f ( x ) ig ( x )
Probability density: 2
Probability: 2 dx
*
Orthogonality: i ( x ) j ( x )dx ij ,
1, i j
ij
0, i j