Scribd Logo
Upload

Welcome to Scribd!

    • 176 views

    1N5758-New Jersey Semiconductor

    Uploaded by

    Jn Spns
    This document provides information about silicon 3-layer bilateral triggers produced by NJ Semi-Conductors. The triggers exhibit bi-directional resistance switching and are used in thyristor triggering circuits. They have a switching voltage range of 20-36 volts, symmetrical switching characteristics, and a passivated surface for reliability. Maximum ratings include a peak pulse current of 2 amps and an operating junction temperature range of -40 to 100 degrees Celsius.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    1N5758-New Jersey Semiconductor

    Uploaded by

    Jn Spns
    176 views1 page
    This document provides information about silicon 3-layer bilateral triggers produced by NJ Semi-Conductors. The triggers exhibit bi-directional resistance switching and are used in thyristor triggering circuits. They have a switching voltage range of 20-36 volts, symmetrical switching characteristics, and a passivated surface for reliability. Maximum ratings include a peak pulse current of 2 amps and an operating junction temperature range of -40 to 100 degrees Celsius.

    Original Description:

    Semiconductor

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document provides information about silicon 3-layer bilateral triggers produced by NJ Semi-Conductors. The triggers exhibit bi-directional resistance switching and are used in thyristor triggering circuits. They have a switching voltage range of 20-36 volts, symmetrical switching characteristics, and a passivated surface for reliability. Maximum ratings include a peak pulse current of 2 amps and an operating junction temperature range of -40 to 100 degrees Celsius.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    176 views1 page

    1N5758-New Jersey Semiconductor

    Uploaded by

    Jn Spns
    This document provides information about silicon 3-layer bilateral triggers produced by NJ Semi-Conductors. The triggers exhibit bi-directional resistance switching and are used in thyristor triggering circuits. They have a switching voltage range of 20-36 volts, symmetrical switching characteristics, and a passivated surface for reliability. Maximum ratings include a peak pulse current of 2 amps and an operating junction temperature range of -40 to 100 degrees Celsius.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 1

    J.iiu4_/ ^zrni-tLonauctoi L/^ioaueti, Una.

    C/

    20 STERN AVE. TELEPHONE: (973) 376-2922


    SPRINGFIELD, NEW JERSEY 07081 (212)227-6005
    U.S.A. FAX: (973) 376-8960

    SILICON 3-LAYER BILATERAL TRIGGERS


    SILICON
    BILATERAL TRIGGERS
    Annular two terminal devices that exhibit bi-directional fugitive
    resistance switching characteristic*. These economicel. durable de-
    vices have been developed for us* in thyristor triggering circuits for
    lamp drivers and universal motor speed controls.

    Switching Voltage Range - 20 to 36 Volts Nominal


    Symmetrical Characteristics
    Passh/ated Surface for Reliability and Uniformity

    MAXIMUM RATINGS iTA 25C unieu otnirwiie noted!

    Rating Symbol Valw Unit

    Peak PulM Current !puln Amp


    130 Hi duration. 1 20 Hz 2.0

    Power Oiiupation TA - - <O to 2S8C 300 mW


    '0
    4.0 mW/C
    Operating Junction Temperature Range -40wIOO C
    TJ

    Storege Temperature fling* T


    -40U *1SO c

    ELECTRICAL CHARACTERISTICS ITA - 25C unliothwwMnoitdl

    Ct,ar.en SyiHMI Mh> Max Unit

    Switching Voltage vs Volt!

    (Both Direction!) 1NS7S8 18 24


    1NS759 20 28 "- SIYH J
    IN 5760 24 32 ,,o n i urn TEimiML i
    t-.n 7. HAMTCRHINAL 2
    1N5761 28 36
    1N5762 32 40
    1N575BA 18 22
    1N57S9A 22 28
    1N5760A 2 30
    1N5761A 30 34
    1N5762A 34 38
    MA
    Switching Current IS _ mi
    Jfii
    IBoth Oirecnonil 1NS75B/5762 100
    (TA --40to*750a 1N57S8A,S762A
    Switching Voltage Change Av
    - 28
    Voin
    St
    *
    t&
    (Both Direction!
    (4l - IS 10 1 - 10mA)
    IN575B,A,tN5759,A
    1N5760.A.61,A.62.A
    5,0
    7.0

    - m
    Leakage Current IB A
    IBeth Direction!). (Applied Voltage 14 Voml - 10 P

    Switching Voltage Symmetry IVs+MVs-) Vein UMBIQ.HB


    1NS758/57S2 4.0
    1N575BA(5762A - 2,0
    Peek PulM Amplitude (figure 11 Voltl
    (Both Polaritieil 1N5758.A.1NS7S9.A 3.0 ~
    1N5760.A.61.A.62.A 5.0 -

    NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
    notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
    to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
    NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

    Quality Semi-Conductors

    You might also like