NPN-Silizium-Fototransistor

Silicon NPN Phototransistor

BP 103

Wesentliche Merkmale Features

• Speziell geeignet für Anwendungen im Bereich • Especially suitable for applications from
von 420 nm bis 1130 nm 420 nm to 1130 nm
• Hohe Linearität • High linearity
• TO-18, Bodenplatte, klares Epoxy-Gießharz, • TO-18, base plate, transparent epoxy resin
mit Basisanschluß lens, with base connection

Anwendungen Applications
• Computer-Blitzlichtgeräte • Computer-controlled flashes
• Lichtschranken für Gleich- und • Photointerrupters
Wechsellichtbetrieb • Industrial electronics
• Industrieelektronik • For control and drive circuits
• „Messen/Steuern/Regeln“

Typ Bestellnummer
Type Ordering Code
BP 103 Q62702-P75
BP 103-3/4 Q62702-P3577

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Grenzwerte
Maximum Ratings
Bezeichnung Symbol Wert Einheit
Parameter Symbol Value Unit
Betriebs- und Lagertemperatur Top; Tstg – 40 … + 80 °C
Operating and storage temperature range
Löttemperatur bei Tauchlötung TS 260 °C
Lötstelle ≥ 2 mm vom Gehäuse,
Lötzeit t ≤ 5 s
Dip soldering temperature, ≥ 2 mm distance
from case bottom t ≤ 5 s
Löttemperatur bei Kolbenlötung TS 300 °C
Lötstelle ≥ 2 mm vom Gehäuse,
Lötzeit t ≤ 3 s
Iron soldering temperature, ≥ 2 mm distance
from case bottom t ≤ 3 s
Kollektor-Emitterspannung VCE 50 V
Collector-emitter voltage
Kollektorstrom IC 100 mA
Collector current
Kollektorspitzenstrom, τ < 10 µs ICS 200 mA
Collector surge current
Emitter-Basisspannung VEB 7 V
Emitter-base voltage
Verlustleistung, TA = 25 °C Ptot 150 mW
Total power dissipation
Wärmewiderstand RthJA 500 K/W
Thermal resistance

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Kennwerte (TA = 25 °C, λ = 950 nm)

Characteristics
Bezeichnung Symbol Wert Einheit
Parameter Symbol Value Unit
Wellenlänge der max. Fotoempfindlichkeit λS max 850 nm
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit λ 420 … 1130 nm
S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax
Bestrahlungsempfindliche Fläche A 0.12 mm2
Radiant sensitive area
Abmessungen der Chipfläche L×B 0.5 × 0.5 mm × mm
Dimensions of chip area L×W
Abstand Chipoberfläche zu Gehäuseoberfläche H 0.2 … 0.8 mm
Distance chip front to case surface
Halbwinkel ϕ ± 55 Grad
Half angle deg.
Fotostrom der Kollektor-Basis-Fotodiode
Photocurrent of collector-base photodiode
Ee = 0.5 mW/cm2, VCB = 5 V IPCB 0.9 µA
Ev = 1000 Ix, Normlicht/standard light a IPCB 2.7 µA
VCB = 5 V
Kapazität
Capacitance
VCE = 0 V, f = 1 MHz, E = 0 CCE 8 pF
VCB = 0 V, f = 1 MHz, E = 0 CCB 11 pF
VEB = 0 V, f = 1 MHz, E = 0 CEB 19 pF
Dunkelstrom ICEO 5 (≤ 100) nA
Dark current
VCE = 35 V, E = 0

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Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern
gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished by
arabian figures.
Bezeichnung Symbol Wert Einheit
Parameter Symbol Value Unit
-2 -3 -4 -5
Fotostrom, λ = 950 nm
Photocurrent
Ee = 0.5 mW/cm2, VCE = 5 V IPCE 80 … 160 125 … 250 200 … 400 ≥ 320 µA
Ev = 1000 lx
Normlicht/standard light A
VCE = 5 V IPCE 0.38 0.6 0.95 1.4 mA
Anstiegszeit/Abfallzeit t r, t f 5 7 9 12 µs
Rise and fall time
IC = 1 mA, VCC = 5 V, RL = 1 kΩ
Kollektor-Emitter- VCEsat 150 150 150 150 mV
Sättigungsspannung
Collector-emitter saturation
voltage
IC = IPCEmin1) × 0.3
Ee = 0.5 mW/cm2
Stromverstärkung I PCE 140 210 340 530 –
Current gain ---------
I PCB
Ee = 0.5 mW/cm2, VCE = 5 V
1)
IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe.
1)
IPCEmin is the min. photocurrent of the specified group.

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Relative Spectral Sensitivity Photocurrent Total Power Dissipation

Srel = f (λ) IPCE = f (Ee), VCE = 5 V Ptot = f (TA)

Output Characteristics Output Characteristics Dark Current

IC = f (VCE), IB = Parameter IC = f (VCE), IB = Parameter ICEO = f (VCE), E = 0

Photocurrent Dark Current ICEO/ICEO25° = f (TA), Collector-Emitter Capacitance

IPCE/IPCE25° = f (TA), VCE = 5 V VCE = 25 V, E = 0 CCE = f (VCE), f = 1 MHz, E = 0

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Collector-Emitter Capacitance Emitter-Base Capacitance

CCB = f (VCB), f = 1 MHz, E = 0 CEB = f (VEB), f = 1 MHz, E = 0

Directional Characteristics
Srel = f (ϕ)

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Maßzeichnung
Package Outlines

Radiant
sensitive area 3)
Chip position .0 04 5)
( 03
1.1 (0.

ø4.3 (0.169)
ø4.1 (0.161)
E C B
(2.7 (0.106)) 0.9
ø0.45 (0.018) 1.1

2.54 (0.100)
(0

spacing
0.9 .04
(0 3)
.03
5)
14.5 (0.571) 3.6 (0.142) ø5.5 (0.217)
12.5 (0.492) 3.0 (0.118) ø5.2 (0.205)
GETY6017

Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).

Published by OSRAM Opto Semiconductors GmbH & Co. OHG

Wernerwerkstrasse 2, D-93049 Regensburg
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Attention please!
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
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Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1
A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2
Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.

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