VLSI I - V Characteristics

VLSI DESIGN

I-V Characteristics
by
Malathi .L
Assistant Professor (Sr. Gr.) /ECE
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CMOS (Complementary Metal Oxide Semiconductor)
Applications:
 Microprocessors
 Batteries
 Digital Sensors

 This technology uses both NMOS and PMOS to realize various logic functions. Both N
and P MOSFET channels are designed to have matching characteristics.

 Before CMOS, PMOS and NMOS logic were widely used for implementing logic gates.
 PMOS was then replaced by the NMOS Technology, which used to be the standard IC
fabrication technology.
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NMOS technology
Advantages:
 Simple physical process
 Functional density
 Processing speed and manufacturing efficiency.
Disadvantages:
 Electrical asymmetry
 Static power dissipation.
 These drawbacks are minimized by using CMOS Technology.
 The main advantage of CMOS is the minimal power dissipation as this only occurs during
circuit switching.
 This results in much better performance as it allows integrating more CMOS gates on an
IC.
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NMOS
 N-channel MOSFET consists of an N-type source and
drain diffused on a P-type substrate.
 The majority carriers are electrons. When the applied

voltage to the gate is high enough, the NMOS will
conduct; otherwise, it will not.
 Since the majority carriers (electrons) travel faster

than holes, NMOS are considered to be faster than
PMOS.
NMOS G=High ON
G=Low OFF
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PMOS
 P-channel MOSFET also has a Source and Drain
diffused on a substrate. Bubble indicates inverted
behavior.
 The Source is P-type while the substrate is N-type. The

majority carriers are holes.
 PMOS will conduct when a low voltage is applied.

When a high voltage is applied to the gate, the PMOS
will not conduct.
PMOS G=High OFF

G=Low ON
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CMOS
 Since CMOS technology uses both N-type and P-type transistors to design logic functions,
a signal which turns ON a transistor type is used to turn OFF the other transistor type.
 This eliminates the need for pull-up resistors in favor of simple switches.
 In CMOS logic gates N-type MOSFETs are arranged in a pull-down network between the
output and the low voltage supply rail (VSS or ground) while P-type MOSFETs are in a
pull-up network between the output and the higher-voltage rail (often VDD).
 Thus, the N-type MOSFET will be ON when the P-type MOSFET is OFF, and vice-versa.
For any input pattern, one of the networks is ON and the other is OFF.
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CMOS Advantages:
 High speed
 Low power dissipation
 High noise margins in both
states
 Wide range of source and
input voltages (fixed source
voltage)
 Minimal power dissipation
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NMOS and PMOS Transistor
Operations
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Depletion Mode
 The depletion mode MOSFETs are generally known as ‘Switched ON’ devices,
because these transistors are generally closed when there is no bias voltage
at the gate terminal.
 If the gate voltage increases in positive, then the channel width increases in
depletion mode.
 As a result the drain current ID through the channel increases. If the applied
gate voltage more negative, then the channel width is very less and MOSFET
may enter into the cutoff region.
 The depletion mode MOSFET is a rarely used type of transistor in the

electronic circuits.
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Enhancement Mode
 The Enhancement mode MOSFET is commonly used type of transistor.
 This type of MOSFET is equivalent to normally-open switch because it does not

conduct when the gate voltage is zero.
 If the positive voltage (+VGS) is applied to the N-channel gate terminal, then the
channel conducts and the drain current flows through the channel.
 If this bias voltage increases to more positive then channel width and drain
current through the channel increases to some more.
 But if the bias voltage is zero or negative (-VGS) then the transistor may switch
OFF and the channel is in non-conductive state.
 So now we can say that the gate voltage of enhancement mode MOSFET
enhances the channel.
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Applications:
 MOSFETs are used in digital integrated circuits, such as

microprocessors.
 Used in calculators.
 Used in memories and in logic CMOS gates.
 Used as analog switches.
 Used as amplifiers.
 Used in the applications of power electronics and switch
mode power supplies.
 MOSFETs are used as oscillators in radio systems.
 Used in automobile sound systems and in sound
reinforcement systems.
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MOS DC Equations
Long-Channel I-V
Characteristics
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MOS DC Equations
Long-Channel I-V Characteristics
MOS transistors have three regions of operation:
 Cutoff or subthreshold region
 Linear region
 Saturation region
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 The long-channel model assumes that the current
through the transistor is 0 (OFF).
 When a transistor turns ON (Vgs > Vt), the gate

attracts carriers (electrons) to form a channel.
 The electrons drift from source to drain at a rate

proportional to the electric field between these
regions.
 Thus, we can compute currents if we know the
amount of charge in the channel and the rate at which
it moves.
 Charge on each plate of a capacitor is
Q = CV.
Thus, the charge in the channel Qchannel is
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Thank You!!
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VLSI DESIGN

 These drawbacks are minimized by using CMOS Technology.

 The majority carriers are electrons. When the applied

 Since the majority carriers (electrons) travel faster

 The Source is P-type while the substrate is N-type. The

 PMOS will conduct when a low voltage is applied.

PMOS G=High OFF

 The depletion mode MOSFET is a rarely used type of transistor in the

 This type of MOSFET is equivalent to normally-open switch because it does not

 MOSFETs are used in digital integrated circuits, such as

 When a transistor turns ON (Vgs > Vt), the gate

 The electrons drift from source to drain at a rate

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