The etching process involves the removal of material from a surface using corrosive action, and it
plays a crucial role in various industries, including semiconductor manufacturing and
micromachining. There are two primary etching technologies used: wet etching and dry etching,
each with its advantages and disadvantages.
### Wet Etching Process:
- **Principle**: Uses chemical solutions to remove unwanted material from a surface through a
corrosive reaction.
- **Characteristics**:
- Simple process involving immersion or spraying of wafers in chemical baths.
- Isotropic etching occurs in all directions simultaneously, leading to material removal.
- **Advantages**:
- Simple equipment and relatively fast process.
- Effective for cleaning wafers and removing material isotropically.
- **Disadvantages**:
- Costly due to high chemical usage.
- Less precise than dry etching and produces toxic byproducts.
### Dry Etching Process:
- **Principle**: Involves converting gas to plasma in a vacuum environment to remove material
from a surface.
- **Characteristics**:
- Utilizes plasma to create high-energy free radicals that react on the wafer surface.
- Offers more precise and controlled material removal compared to wet etching.
- **Advantages**:
- Greater precision and control over material removal.
- Lower cost of disposal and reduced environmental impact.
- **Disadvantages**:
- Requires more complex equipment and setup compared to wet etching.
- Can generate hazardous byproducts that need proper disposal.
In semiconductor manufacturing and micromachining, the choice between wet etching and dry
etching depends on factors such as precision requirements, cost considerations, environmental
impact, and the specific application's needs. Both processes are essential for shaping and carving out
materials to create intricate patterns and structures in various industries.
Citations:
[1] [Link]
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[2] [Link]
etching-plasma-etching-LST-and-3D_tbl1_303978295
[3] [Link]
[4] [Link]
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[5] [Link]
Here are some additional details on the wet etching of Borosilicate Glass (BSG) and Phosphosilicate
Glass (PSG):
## BSG Etching
- BSG is a type of doped silicon dioxide glass that contains boron oxide (B2O3) as the dopant[1][4].
- It is commonly used as a glassy layer in semiconductor device fabrication and can be selectively
etched using diluted hydrofluoric acid (HF) solutions[1][5].
- The etch rate of BSG depends on factors such as the B2O3 concentration, HF concentration, and
temperature[4][5].
- A typical BSG etchant is a solution of sulfuric acid and hydrofluoric acid (H2SO4/HF) with a volume
ratio ranging from 20:1 to 3:1[3].
- The etching is often carried out at temperatures between 20-60°C for 70-180 seconds[3].
## PSG Etching
- PSG is another type of doped silicon dioxide glass that contains phosphorus oxide (P2O5) as the
dopant[2][3].
- It is used as a sacrificial layer in micromachining processes due to its faster etching rate compared
to undoped silicon dioxide in HF solutions[2].
- The PSG layer is typically formed during the phosphorus predep (predeposition) step in
semiconductor device fabrication[2].
- To remove the PSG layer, a wet etching process similar to BSG etching is employed, often using the
same etchant solutions[2][3].
- Proper removal of the PSG layer is crucial as high surface concentrations of phosphorus can
negatively impact photoresist adhesion[2].
## Etch Uniformity Improvement
- Achieving uniform etching across the wafer surface is essential, especially as device dimensions
shrink and wafer sizes increase[3].
- One method to improve etch uniformity involves forming a water film on the wafer surface prior to
applying the viscous acid etchant[3].
- The water film helps the subsequent viscous etchant, such as sulfuric acid or phosphoric acid, to
spread more uniformly across the wafer surface, leading to improved etch uniformity[3].
By understanding the etching behavior of BSG and PSG layers and employing techniques to enhance
etch uniformity, researchers and engineers can optimize the wet etching process for semiconductor
device fabrication and micromachining applications.
Citations:
[1] [Link]
[2] [Link]
[3] [Link]
[4] [Link]
[5]
[Link]
nt_Concentrations_on_Isotropic_Etch_Profile
The search results provide information on wet etchants for various materials, including Borosilicate
Glass (BSG) and Phosphosilicate Glass (PSG), used in semiconductor device manufacturing and
micromachining processes. Here is a summary of the relevant details from the sources:
1. **BSG Etchants**:
- BSG is etched using wet etchants containing diluted hydrofluoric acid (HF)[5].
- The etching process involves using specific solutions to dissolve and pattern BSG layers in
semiconductor device fabrication[5].
2. **PSG Etchants**:
- PSG, a type of doped silicon dioxide, is commonly used as a sacrificial layer in micromachining
processes due to its faster etching rate compared to undoped silicon dioxide in HF solutions[3].
- PSG is doped with phosphorus oxide (P2O5) in the range of 5-10% and is annealed before use to
outgas hydrogen, which can affect overlying films[3].
In summary, the wet etching of BSG and PSG involves using specific etchants to selectively remove
these materials in semiconductor processing and micromachining applications. The etching process
is crucial for patterning and structuring these glassy layers to achieve desired device configurations
and functionalities.
Citations:
[1] [Link]
[2] [Link]
[3] [Link]
[4] [Link]
[5] [Link]
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