Government Polytechnic, Jalgaon (0018)

Micro-Project

Of

VLSI with VHDL ( 22062)

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MAHARASHTRA STATE BOARD OF TECHNICAL
EDUCATION
GOVERNMENT POLYTECHNIC, JALGAON
(0018/1567)
Program Name and Code: Electronics & Telecommunication
Course Name and Code: VLSI with VLDH (22062)
Academic Year : 2023-2024

Semester : Sixth

A MICRO PROJECT
on
Prepare report on CMOS Fabrication
Process.

Submitted on / / 2024 by the group of 4 students

Sr. Roll Enrollmen Seat
Name of the students No.
No. No. t no
1 15 Gaurav Harish Koyate 2100180343 378300
2 20 Om Deepak Narkhede 2100180351 378306
3 23 Aakib Zuber Patel 2100180354 378309
4 30 Harshal Devidas Pawar 2100180366 378318

Project Guided by

Prof. B. M. Chaudhari

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MAHARASHTRA STATE BOARD OF
TECHNICAL EDUCATION

Certificate
This is to certify that Mr. GHK, ODN, AZP, HDP Roll No- 15, 20, 23, 30 of Sixth
Semester of Diploma in Electronics & Telecommunication of Institute, Government
Polytechnic, Jalgaon (Code:0018/1567) has completed the Micro Project
satisfactorily in the Subject – VLSI with VLDH (22062) for the Academic Year
2023- 2024 as prescribed in the curriculum.

Place: Jalgaon Enrollment No: 2100180334,51,54,66

Date: ……………………. Seat No: 378300,06,09,18

Subject Teacher Head of the Department Principal

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GOVTERNMENT POLYTECHNIC
JALGAON

-SUBMISSION-
I GHK, ODN, AZP, HDP Roll No. /Seat No. 15, 20, 23, 30 as a student of sixth
Sem of the Program Electronics & Telecommunication humbly submit that I
have completed from time to time the Practical/Micro-Project work as described
in this report by my own skills and study between the period from …… to ….. as
per instructions/guidance of Prof. B. M. Chaudhari
And that following students were associated with me for this work however,
quantum of my contribution has been approved by the Lecturer.
And that I have not copied the report on its any appreciable part from any other
literature in contravention of the academic ethics.

Date: ……/….../2024 Signature of Student

Gaurav Koyate ……….………

Om Narkhede ……………….
Aakib Patel ……………….
Harshal Pawar ……………......

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Acknowledgement

In this world of competition there is a race of existence in which those are

having will to come forward succeed. Project is like a bridge between theoretical
and practical working. With this willing I joined this particular project. First of
all, I would thank to Almighty of God who is obviously the one has always guided
me to work on the right of path of life. Secondly, I would like to thank B.M.
Chaudhari who gave me the golden opportunity to do this wonderful project of
VLSI with VLDH (22062), Who also helped in completing my project. I came
to know about so many new things I am really thankful full to him. I would also
like to thank my parents and my friends who helped me a lot in finalizing this
project this project within the limited time frame.

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Index

Sr. Topic Page no

no
1 Introduction 7

2 Basic principles of fabrication 8

3 Step-by-Step procedure of CMOS 9

fabrication

4 Challenges and Advances in CMOS 12

Fabrication:

5 Applications of CMOS Technology: 12

6 Advantages and 14
Disadvantages

7 Fabrication process of FET 15

8 Need to understand FET fabrication. 16

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9 Relationship Between FET and CMOS 16
Fabrication Processes

10 Conclusion 13

11 References 14

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Introduction:

In the realm of semiconductor manufacturing, the fabrication process of

Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuits stands as
a cornerstone of modern VLSI (Very Large Scale Integration) design. CMOS
technology has revolutionized the electronics industry, enabling the creation of
complex and high-performance integrated circuits essential for a myriad of
applications, from consumer electronics to advanced computing systems.

This report delves into the intricate and fascinating world of CMOS fabrication,
unraveling the intricate steps and technologies involved in crafting these miniature
marvels. By understanding the fundamental principles and processes that underpin
CMOS fabrication, one can appreciate the complexities and innovations driving the
development of cutting-edge semiconductor devices.

The journey through CMOS fabrication is a meticulous and exacting process,

involving a series of steps that transform a silicon wafer into a functional CMOS
integrated circuit. Each step in this process is crucial, as even the slightest
deviation can impact the performance and reliability of the final product. As such,
this report seeks to illuminate the various stages of CMOS fabrication, highlighting
the significance of each step and the innovations that have shaped modern
semiconductor manufacturing.

Through this exploration, we aim to provide a comprehensive overview of CMOS

fabrication, from its humble beginnings to its current status as the backbone of
modern electronics. By delving into the complexities of CMOS fabrication, we can
gain a deeper appreciation for the technology that powers our digital world and the
innovations that continue to drive its evolution.

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Basic principles of fabrication

1. Substrate Preparation: Start with a high-purity silicon wafer.

2. Thermal Oxidation: Grow a thin layer of silicon dioxide (SiO2) on the wafer's
surface.
3. Photolithography: Apply a photoresist, expose it to UV light through a mask,
and develop it to create a pattern.
4. Etching: Remove the exposed areas of the oxide layer using chemicals.
5. Doping: Introduce dopants into the silicon to modify its electrical properties.
6. Deposition: Deposit thin films of conducting and insulating materials on the
wafer.
7. Metallization: Deposit metal layers on top of the oxide layer to create
interconnects.
8. Annealing: Subject the wafer to high temperatures to activate dopants and repair
crystal damage.
9. Testing: Test the fabricated integrated circuits for functionality and
performance.
10. Packaging: Package the integrated circuits to protect them and facilitate their
integration into electronic devices.

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Step-by-Step procedure of CMOS fabrication

The abrogation process of CMOS (Complementary Metal-Oxide-Semiconductor)

technology involves the systematic dismantling and disposal of CMOS devices and
components. This process is crucial to ensure proper disposal of electronic waste (e-
waste) and minimize environmental impact. Here, we delve into a detailed
exploration of the CMOS abrogation process:

1. Identification: The first step in the abrogation process is to identify the CMOS
devices and components that require disposal. This may include integrated circuits
(ICs), sensors, and other electronic components.

2. Inventory: A detailed inventory of the CMOS devices and components is created,

including information such as type, quantity, and condition.

3. Data Sanitization: Before disposal, any sensitive data stored on the CMOS
devices is securely erased to prevent unauthorized access.

4. Disassembly: The CMOS devices are disassembled into their individual

components, including ICs, capacitors, resistors, and connectors.

5. Component Separation: The components are separated based on their material

composition, such as metal, plastic, and silicon.

6. Material Recovery: Recoverable materials, such as metals and plastics, are

extracted from the components for recycling.

7. Hazardous Material Handling: Hazardous materials, such as lead and mercury,

are carefully extracted and disposed of according to environmental regulations.

8. Circuit Board Disposal: Circuit boards containing CMOS components are

shredded and processed to recover valuable materials, such as gold and copper.

9. Plastic Recycling: Plastic components are sorted and processed for recycling into
new products.

10. Metal Recycling: Metals recovered from the CMOS components, such as
aluminum and copper, are melted down and recycled into new products.

11. Environmental Compliance: Throughout the abrogation process, environmental

regulations and guidelines are followed to ensure proper disposal and minimize
environmental impact.

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12. Documentation: A detailed record of the abrogation process, including the
inventory, disposal methods, and recycling efforts, is maintained for auditing and
compliance purposes.

13. Quality Assurance: The abrogation process is monitored and evaluated to ensure
that all CMOS devices and components are properly disposed of and recycled.

14. Continuous Improvement: Feedback from the abrogation process is used to

identify areas for improvement and implement best practices for future abrogation
efforts.

15. Closure: Once the abrogation process is complete, the site is closed and restored
to its original state, ensuring that all CMOS devices and components have been
properly disposed of and recycled.

In conclusion, the CMOS abrogation process is a comprehensive and meticulous

process that involves the systematic dismantling, disposal, and recycling of CMOS
devices and components. By following strict environmental regulations and
guidelines, the abrogation process helps minimize the environmental impact of
electronic waste and promote sustainable disposal practices.

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Fig. 1 Step wise procedure of CMOS fabrication.
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Challenges and Advances in CMOS Fabrication:

- Scaling Down: Challenges arise from shrinking transistor sizes, leading to

increased leakage currents and quantum effects.
- Process Complexity: As processes become more intricate, controlling parameters
such as film thickness and feature sizes becomes challenging.
- Material Compatibility: Integrating new materials with existing processes can be
difficult and requires careful optimization.
- Advances: Technologies such as extreme ultraviolet (EUV) lithography and Fin
FETs have helped overcome these challenges.

Development of CMOS Technology:

1. Historical Background: Explore the history of CMOS technology development,

starting from its inception to its widespread adoption in modern electronics.

2. Fundamental Concepts: Explain the fundamental principles of CMOS technology,

including the operation of MOSFETs (Metal-Oxide-Semiconductor Field-Effect
Transistors) and the advantages of using complementary pairs of transistors.

3. Process Evolution: Describe the evolution of CMOS fabrication processes, from

early technologies to modern sub-10nm processes, highlighting key advancements
and challenges.

4. Integration Challenges: Discuss the challenges of integrating CMOS technology

with other semiconductor technologies, such as memory, sensors, and power
devices.

5. Applications Overview: Provide an overview of the diverse applications of

CMOS technology, including digital logic, analog circuits, sensors, and
microprocessors.

6. Future Trends: Explore current research and development trends in CMOS

technology, such as advanced materials, novel transistor structures, and alternative
computing paradigms.

7. Impact on Society: Discuss the societal impact of CMOS technology, including

its 0role in driving innovation, enabling modern electronics, and shaping the digital
economy.

8. Environmental Considerations: Address the environmental impact of CMOS

technology, including e-waste management, energy consumption, and sustainable
manufacturing practices.

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Advantages:

1. Low Power Consumption: CMOS circuits consume very little power when idle,
making them ideal for battery-powered devices and reducing overall power
consumption in electronic systems.

2. High Integration Density: CMOS technology allows for the integration of

millions of transistors on a single chip, enabling complex functionality in a small
footprint.

3. High Noise Immunity: The complementary nature of CMOS logic provides

inherent noise immunity, resulting in reliable operation in noisy environments.

4. Wide Operating Voltage Range: CMOS circuits can operate over a wide range of
voltages, making them versatile and suitable for various applications.

5. Compatibility with Digital and Analog Circuits: CMOS technology is compatible

with both digital and analog circuits, allowing for the integration of different types
of functionality on a single chip.

Disadvantages:

1. Complex Fabrication Process: The fabrication of CMOS ICs involves complex

processes, including photolithography, oxide layer formation, doping, and metal
deposition, which can be time-consuming and expensive.

2. High Initial Costs: The initial costs of setting up a CMOS fabrication facility
(fabs) are high, making it challenging for smaller companies to enter the market.

3. Limited Speed: While CMOS technology offers high integration density and low
power consumption, it is generally slower than other technologies such as Bipolar
Junction Transistor (BJT) technology.

4. Temperature Sensitivity: CMOS circuits can be sensitive to temperature

variations, which can affect their performance in extreme environments.

5. Manufacturing Variability: Variability in the manufacturing process can lead to

differences in the performance of CMOS devices, which may require additional
testing and calibration.

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Applications of CMOS Technology:

- Consumer Electronics: CMOS technology is used in smartphones, tablets, laptops,

and digital cameras.
- Healthcare: CMOS sensors are used in medical imaging, diagnostics, and wearable
health monitors.
- Automotive: CMOS technology is used in car sensors, navigation systems, and
driver-assistance systems.
- Industrial: Used in robotics, automation, and industrial control systems for
efficient and reliable operation.
- Telecommunications: CMOS technology is used in telecommunications equipment
for data processing and communication.
- Aerospace and Defense: CMOS technology is used in aerospace and defense
applications for its reliability and performance.
- Energy: CMOS technology is used in energy management systems and smart grid
applications for efficient energy utilization.

Fabrication process of FET

- Begins with a silicon wafer, which undergoes cleaning and oxidation to create a
thin layer of silicon dioxide.
- Photolithography is used to define the regions where the FETs will be formed, and
dopants are introduced into the silicon to create the source, drain, and channel
regions.
- A thin gate oxide layer is grown, followed by the deposition and patterning of a
gate electrode material, such as polysilicon or metal.
- Additional oxide layers are deposited and patterned to insulate the gate electrode
and define the interconnects.
- The wafer undergoes multiple layers of deposition, patterning, and etching to
create the desired circuitry.
- The process is completed with a final passivation layer to protect the circuitry.

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Need to understand FET fabrication.

The comparison between CMOS and FET fabrication processes is essential because
FETs are a key component of CMOS technology. CMOS (Complementary Metal-
Oxide-Semiconductor) technology utilizes both N-channel and P-channel
MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) to achieve low
power consumption and high integration density. Understanding the fabrication
processes of both CMOS and FETs helps in comprehending the overall construction
and functioning of CMOS devices, which are widely used in modern electronic
devices such as microprocessors, memory chips, and sensors.

Relationship Between FET and CMOS Fabrication Processes

1. Common Foundation:
- Both FET (Field-Effect Transistor) and CMOS (Complementary Metal-Oxide-
Semiconductor) technologies are based on the use of silicon as a substrate material.
The fabrication processes for both technologies start with the preparation of a
silicon wafer through cleaning and oxidation steps.

2. Use of Thin Oxide Layers:

- Both FET and CMOS technologies involve the creation of thin oxide layers on
the silicon wafer. These oxide layers serve as insulating materials and play a crucial
role in the operation of the transistors.

3. Deposition and Etching Processes:

- Both technologies utilize deposition and etching processes to create the various
layers and structures required for transistor formation. This includes the deposition
of materials such as polysilicon for gate electrodes and metal for interconnects, as
well as the etching of these materials to define the transistor features.

4. Doping Techniques:
- Both FET and CMOS technologies rely on doping techniques to introduce
impurities into the silicon wafer, creating the source, drain, and channel regions of
the transistors. The doping process is critical for controlling the conductivity of
these regions and determining the transistor's characteristics.

5. Integration in CMOS Technology:

- FETs are a key component of CMOS technology, where they are used as the
building blocks for the complementary pairs of transistors that make up CMOS
logic gates. The fabrication processes for FETs are therefore integrated into the
overall CMOS fabrication process.

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Conclusion:

The CMOS fabrication process is a cornerstone of modern electronics, enabling the

creation of integrated circuits that power a wide range of applications. Despite the
challenges posed by scaling and process complexity, advances in technology
continue to drive the industry forward, leading to the development of smaller, faster,
and more efficient electronic devices. As CMOS technology continues to evolve, it
promises to play an even greater role in shaping the future of technology and
innovation

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Reference:
Source QR
https://www.geeksforgeeks.org/what-
is-cmos-fabricationp.

https://www.elprocus.com/the-
fabrication-process-of-cmos-
transistor/

ChatGpt

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