Ordering number : EN8949A

MCH6541
Bipolar Transistor
http://onsemi.com
(–)30V, (–)3A, Low VCE(sat) Complementary Dual MCPH6

Applicaitons
• MOSFET gate drivers, relay drivers, lamp drivers, motor drivers

Features
• Composite type with a PNP transistor and an NPN transistor contained in one package facilitating high-density
mounting
• Ultrasmall package permitting applied sets to be small and slim

Specifications ( ) : PNP
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (--30)40 V
Collector-to-Emitter Voltage VCEO (--)30 V
Emitter-to-Base Voltage VEBO (--)5 V
Collector Current IC (--)700 mA
Collector Current (Pulse) ICP (--)3 A
Collector Dissipation PC When mounted on ceramic substrate (600mm2×0.8mm) 1unit 0.5 W
Total Power Dissipation PT When mounted on ceramic substrate (600mm2×0.8mm) 0.55 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Package Dimensions Product & Package Information

unit : mm (typ) • Package : MCPH6
7022A-012 • JEITA, JEDEC : SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
2.0 0.15 MCH6541-TL-E
Packing Type : TL Marking
0.25

6 5 4
LOT No.

LOT No.

0 to 0.02
EP
2.1
1.6

1 2 3 TL
0.25

0.65 0.3

Electrical Connection
0.85

1 : Emitter1 (PNP TR)

2 : Base1 (PNP TR) 6 5 4

3 : Collector2 (NPN TR)

0.07

1 2 3
4 : Emitter2 (NPN TR)
5 : Base2 (NPN TR)
6 : Collector1 (PNP TR)

6 5 4 MCPH6
1 2 3

Semiconductor Components Industries, LLC, 2013

September, 2013 92612 TKIM/22008EA TIIM TC-00001087 No.8949-1/8
MCH6541

Electrical Characteristics at Ta=25°C

Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=(--)30V, IE=0A (--)100 nA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)100 nA
DC Current Gain hFE VCE=(--)2V, IC=(--10)50mA (200)300 (500)800
Gain-Bandwidth Product fT VCE=(--)2V, IC=(--)50mA (520)540 MHz
Output Capacitance Cob VCB=(--)10V, f=1MHz (4.7)3.3 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)200mA, IB=(--)10mA (--110)85 (--220)190 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)200mA, IB=(--)10mA (--)0.9 (--)1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A (--30)40 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞ (--)30 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10μA, IC=0A (--)5 V
Turn-On Time ton 35 ns
Storage Time tstg See specified Test Circuit. (125)255 ns
Fall Time tf (25)40 ns

Switching Time Test Circuit

IB1
PW=20μs
OUTPUT
D.C.≤1% IB2

INPUT RB
VR RL

50Ω
+ +
220μF 470μF

VBE= --5V VCC=12V

IC=20IB1= --20IB2=300mA
For PNP, the polarity is reversed.

Ordering Information
Device Package Shipping memo
MCH6541-TL-E MCPH6 3,000pcs./reel Pb Free

No.8949-2/8
MCH6541
IC -- VCE [PNP] IC -- VCE [NPN]
--700 700
mA mA A

mA 40mA
--20m

A
0 --25 A 7mA
--3 10m

15m
A
--15m 5mA

A 20mA
--600 600

--
A
--10m

Collector Current, IC -- mA
Collector Current, IC -- mA

--50
A 3mA
--500 --7m 500

30m
--5mA 2mA
--400 400
--3mA
--2mA 1mA

A
--300 300

50m
--1mA
200
400μA
--200
--500μA
200μA
--100 100

IB=0μA IB=0μA
0 0
0 --100 --200 --300 --400 --500 --600 --700 --800 --900 --1000 0 100 200 300 400 500 600 700 800 900 1000
Collector-to-Emitter Voltage, VCE -- mV IT05049 Collector-to-Emitter Voltage, VCE -- mV IT05082
IC -- VBE [PNP] IC -- VBE [NPN]
--800 800
VCE= --2V VCE=2V
--700 700
Collector Current, IC -- mA

Collector Current, IC -- mA
--600 600

--500 500

--400 400

--25°C
5°C
25°C
5°C
25°C
--25°C

--300 300

Ta=7
Ta=7

--200 200

--100 100

0 0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 0 0.2 0.4 0.6 0.8 1.0
Base-to-Emitter Voltage, VBE -- V IT05050 Base-to-Emitter Voltage, VBE -- V IT05083
hFE -- IC [PNP] hFE -- IC [NPN]
1000 1000
VCE= --2V VCE=2V
Ta=75°C
7
Ta=75°C 7
5 25°C
25°C
DC Current Gain, hFE

DC Current Gain, hFE

--25°C 5
3 --25°C

2
3

100
2
7

3 100
--1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 5 7--1000 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000
Collector Current, IC -- mA IT05051 Collector Current, IC -- mA IT05084
VCE(sat) -- IC [PNP] VCE(sat) -- IC [NPN]
--1000 1000
IC / IB=20 7 IC / IB=20
7
5
Saturation Voltage, VCE(sat) -- mV

Saturation Voltage, VCE(sat) -- mV

5 3
2
3

2 100
°C
7 75
5
Collector-to-Emitter

Collector-to-Emitter

--100 3 2 5°C
7 2 Ta= 5 °C
--2
5
7 5°C 10
Ta= 7
5°C
3
--2 5

2 3
25°C 2

--10 1.0
--1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 5 7--1000 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000
Collector Current, IC -- mA IT05054 Collector Current, IC -- mA IT05085

No.8949-3/8
MCH6541

VCE(sat) -- IC [PNP] VCE(sat) -- IC [NPN]

3 1000
IC / IB=50 IC / IB=50
2 7
Saturation Voltage, VCE(sat) -- mV

Saturation Voltage, VCE(sat) -- mV

5
--1000
7 3
5
2
3
Collector-to-Emitter

Collector-to-Emitter
2 °C
100 75
7
--100
75°C °C
7 Ta= 5
25
5°C Ta
=
5 --2 3 5°C
3 C --2
25° 2
2

--10 10
--1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 5 7--1000 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000
Collector Current, IC -- mA IT05055 Collector Current, IC -- mA IT05086
VBE(sat) -- IC [PNP] VBE(sat) -- IC [NPN]
--10 10
IC / IB=20 IC / IB=20
7 7
5
Saturation Voltage, VBE(sat) -- V

Saturation Voltage, VBE(sat) -- V

3 3

2 2

--1.0 1.0
Ta= --25°C Ta= --25°C
Base-to-Emitter

Base-to-Emitter

7 7
75°C 75°C
5 5
25°C 25°C
3 3

2 2

--0.1 0.1
--1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 5 7--1000 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000
Collector Current, IC -- mA IT05056 Collector Current, IC -- mA IT05087
Cob -- VCB [PNP] Cob -- VCB [NPN]
10 10
f=1MHz f=1MHz

7 7
Output Capacitance, Cob -- pF
Output Capacitance, Cob -- pF

5 5

3 3

2 2

0.1 1.0
--1.0 2 3 5 7 --10 2 3 5 1.0 2 3 5 7 10 2 3 5
Collector-to-Base Voltage, VCB -- V IT05053 Collector-to-Base Voltage, VCB -- V IT05088
f T -- IC [PNP] fT -- IC [NPN]
1000 1000
VCE= --10V VCE=10V
Gain-Bandwidth Product, f T -- MHz

Gain-Bandwidth Product, fT -- MHz

7 7

5 5

3 3

2 2

100 100
--1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 5 7--1000 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000
Collector Current, IC -- mA IT05052 Collector Current, IC -- mA IT05089

No.8949-4/8
MCH6541
Ron -- IB [PNP] Ron -- IB [NPN]
100 10
7 f=1MHz 1kΩ f=1MHz 1kΩ
IN OUT 7 IN OUT
5
3 1kΩ 5 1kΩ
2
ON Resistance, Ron -- Ω

ON Resistance, Ron -- Ω
3
IB IB
10 2
7
5
3 1.0
2 7

1.0 5
7
5 3
3 2
2

0.1 0.1
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 0.1 2 3 5 7 1.0 2 3 5 7 10
Base Current, IB -- mA IT06403 Base Current, IB -- mA IT06793
PD -- Ta [PNP/NPN]
0.6
When mounted on ceramic substrate
0.55 (600mm2✕0.8mm)
Allowable Power Dissipation, PD -- W

0.5

0.4
To
t al
di
0.3
ss
ip
1u at
ni io
t n
0.2

0.1

0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C IT10744

No.8949-5/8
MCH6541

Embossed Taping Specification

MCH6541-TL-E

No.8949-6/8
MCH6541

Outline Drawing Land Pattern Example

MCH6541-TL-E
Mass (g) Unit
Unit: mm
0.008 mm
* For reference

0.4

0.6
2.1
0.65 0.65

No.8949-7/8
MCH6541

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PS No.8949-8/8
Mouser Electronics

Authorized Distributor

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