Scribd Logo
Upload

Welcome to Scribd!

    • 33 views

    Silicon Diffused Power Transistor: General Description

    Uploaded by

    DarkTemplarZ rivera rodriguez
    This document provides specifications for the 2SD1403 silicon diffused power transistor, which is a high-voltage, high-speed switching npn transistor primarily used in horizontal deflection circuits of color televisions. It includes maximum ratings and parameters, electrical characteristics, and quick reference data such as collector-emitter voltage, current, power dissipation, and switching times.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Silicon Diffused Power Transistor: General Description

    Uploaded by

    DarkTemplarZ rivera rodriguez
    33 views1 page
    This document provides specifications for the 2SD1403 silicon diffused power transistor, which is a high-voltage, high-speed switching npn transistor primarily used in horizontal deflection circuits of color televisions. It includes maximum ratings and parameters, electrical characteristics, and quick reference data such as collector-emitter voltage, current, power dissipation, and switching times.

    Original Description:

    sdf

    Original Title

    datasheet

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document provides specifications for the 2SD1403 silicon diffused power transistor, which is a high-voltage, high-speed switching npn transistor primarily used in horizontal deflection circuits of color televisions. It includes maximum ratings and parameters, electrical characteristics, and quick reference data such as collector-emitter voltage, current, power dissipation, and switching times.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    33 views1 page

    Silicon Diffused Power Transistor: General Description

    Uploaded by

    DarkTemplarZ rivera rodriguez
    This document provides specifications for the 2SD1403 silicon diffused power transistor, which is a high-voltage, high-speed switching npn transistor primarily used in horizontal deflection circuits of color televisions. It includes maximum ratings and parameters, electrical characteristics, and quick reference data such as collector-emitter voltage, current, power dissipation, and switching times.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 1

    2SD1403 Silicon Diffused Power Transistor

    GENERAL DESCRIPTION
    Highvoltage,high-speed switching npn transistors in a
    plastic envelope with integrated efficiency diode,prim-
    arily for use in horizontal deflection circuites of colour
    television receivers

    QUICK REFERENCE DATA MT-100


    SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
    VCESM Collector-emitter voltage peak value VBE = 0V - 1500 V
    VCEO Collector-emitter voltage (open base) - 600 V
    IC Collector current (DC) - 6 A
    ICM Collector current peak value - 12 A
    Ptot Total power dissipation Tmb 25 - 120 W
    VCEsat Collector-emitter saturation voltage IC =4.0A; IB = 1.0A - 5.0 V
    Icsat Collector saturation current f = 16KHz - - A
    VF Diode forward voltage IF = 5.0A 1.6 2.0 V
    tf Fall time ICsat = 5.0A; f = 16KHz 0.4 - s

    LIMITING VALUES
    SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
    VCESM Collector-emitter voltage peak value VBE = 0V - 1500 V
    VCEO Collector-emitter voltage (open base) - 600 V
    IC Collector current (DC) - 6 A
    ICM Collector current peak value - 12 A
    IB Base current (DC) - - A
    IBM Base current peak value - - A
    Ptot Total power dissipation
    www.DataSheet4U.com
    Tmb 25 - 120 W
    Tstg Storage temperature -55 150
    Tj Junction temperature - 150

    ELECTRICAL CHARACTERISTICS
    SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
    ICE Collector cut-off current VBE = 0V; VCE = VCESMmax - 1.0 mA
    ICES VBE = 0V; VCE = VCESMmax - 2.0 mA
    Tj = 125
    VCEOsust Collector-emitter sustaining voltage IB = 0A; IC = 100mA - V
    L = 25mH
    VCEsat Collector-emitter saturation voltages IC = 4.0A; IB = 1.0A - 5.0 V
    VBEsat Base-emitter satuation voltage IC = 4.0A; IB = 1.0A - 1.1 V
    hFE DC current gain IC = 1.0A; VCE = 5V 8
    VF Diode forward voltage IF = 5.0A 1.6 2.0 V
    fT Transition frequency at f = 5MHz IC = 0.1A; VCE = 10V 2 - MHz
    Cc Collector capacitance at f = 1MHz VCB = 10V 100 - pF
    ts Switching times(16KHz line deflecton circuit) ICsat = 5.0A; Lc=1mH; Cfb = 4nF - - s
    tf Turn-off storage time Turn-off fall time IB(end) =1.0A; IC = 5.0A ; VCC = 105V 0.4 1.0 s

    Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
    Homepage: http://www.wingshing.com E-mail: [email protected]

    You might also like