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    N-Channel Enhancement Mode MOSFET: Product Summary

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    Motorola E5 Plus
    This document provides specifications for the P1603BV N-channel enhancement mode MOSFET. Key specifications include a breakdown voltage of 30V, on-resistance of 16mΩ at 10V gate-source voltage, and continuous drain current rating of 10A. The MOSFET has maximum junction temperature and storage temperature ranges of -55 to 150 degrees Celsius.

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    N-Channel Enhancement Mode MOSFET: Product Summary

    Uploaded by

    Motorola E5 Plus
    82 views5 pages
    This document provides specifications for the P1603BV N-channel enhancement mode MOSFET. Key specifications include a breakdown voltage of 30V, on-resistance of 16mΩ at 10V gate-source voltage, and continuous drain current rating of 10A. The MOSFET has maximum junction temperature and storage temperature ranges of -55 to 150 degrees Celsius.

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    P1603BV-UNIKC.pdf

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    This document provides specifications for the P1603BV N-channel enhancement mode MOSFET. Key specifications include a breakdown voltage of 30V, on-resistance of 16mΩ at 10V gate-source voltage, and continuous drain current rating of 10A. The MOSFET has maximum junction temperature and storage temperature ranges of -55 to 150 degrees Celsius.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    82 views5 pages

    N-Channel Enhancement Mode MOSFET: Product Summary

    Uploaded by

    Motorola E5 Plus
    This document provides specifications for the P1603BV N-channel enhancement mode MOSFET. Key specifications include a breakdown voltage of 30V, on-resistance of 16mΩ at 10V gate-source voltage, and continuous drain current rating of 10A. The MOSFET has maximum junction temperature and storage temperature ranges of -55 to 150 degrees Celsius.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 5

    P1603BV

    N-Channel Enhancement Mode MOSFET

    PRODUCT SUMMARY
    V(BR)DSS RDS(ON) ID

    30V 16mΩ @VGS = 10V 10A

    SOP- 08

    ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)


    PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
    Gate-Source Voltage VGS ±20 V
    TA = 25 °C 10
    Continuous Drain Current ID
    TA = 70 °C 8
    1
    A
    Pulsed Drain Current IDM 55
    Avalanche Current IAS 23
    Avalanche Energy L = 0.1mH EAS 26 mJ
    TA = 25 °C 2.6
    Power Dissipation PD W
    TA = 70 °C 1.6
    Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C

    THERMAL RESISTANCE RATINGS


    THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
    Junction-to-Case RqJC 25
    °C / W
    Junction-to-Ambient RqJA 50
    1
    Pulse width limited by maximum junction temperature.

    Ver 1.0 1 2012/4/13


    P1603BV
    N-Channel Enhancement Mode MOSFET

    ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)


    LIMITS
    PARAMETER SYMBOL TEST CONDITIONS UNIT
    MIN TYP MAX
    STATIC
    Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 30
    V
    Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1.0 1.8 2.5
    Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA
    VDS = 24V, VGS = 0V 1
    Zero Gate Voltage Drain Current IDSS mA
    VDS = 20V, VGS = 0V , TJ = 125 °C 10
    On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 55 A
    Drain-Source On-State VGS = 4.5V, ID = 6A 19.4 25.0
    RDS(ON) mΩ
    Resistance1 VGS = 10V, ID = 8A 11.8 16.0
    Forward Transconductance1 gfs VDS = 5V, ID = 8A 40 S
    DYNAMIC
    Input Capacitance Ciss 560
    Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 179 pF
    Reverse Transfer Capacitance Crss 100
    Gate Resistance Rg VGS = 0V, f = 1MHz 2 Ω
    Qg(VGS = 10V) 12
    Total Gate Charge2
    Qg(VGS = 4.5V) VDS = 0.5V(BR)DSS, 5
    nC
    Gate-Source Charge 2 Qgs ID = 8A, VGS = 10V 2.1
    Gate-Drain Charge2 Qgd 3.5
    2 td(on)
    Turn-On Delay Time 7
    2 tr
    Rise Time VDS = 15V, RL = 1.5Ω 29
    nS
    Turn-Off Delay Time 2 td(off) VGS = 10V, ID @ 10A, RGEN = 6Ω 45
    Fall Time2 tf 18
    SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
    Continuous Current IS 2.6 A
    1 VSD IF = 8A, VGS = 0V
    Forward Voltage 1 V
    Reverse Recovery Time trr 24 nS
    IF = 8A, dlF/dt = 100A / mS
    Reverse Recovery Charge Qrr 29 nC
    1
    Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
    2
    Independent of operating temperature.

    Ver 1.0 2 2012/4/13


    P1603BV
    N-Channel Enhancement Mode MOSFET

    Ver 1.0 3 2012/4/13


    P1603BV
    N-Channel Enhancement Mode MOSFET

    Ver 1.0 4 2012/4/13


    P1603BV
    N-Channel Enhancement Mode MOSFET

    Ver 1.0 5 2012/4/13

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