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UNISONIC TECHNOLOGIES CO., LTD

2SB649/A PNP SILICON TRANSISTOR

BIPOLAR POWER GENERAL 1

PURPOSE TRANSISTOR
SOT-89

APPLICATIONS
* Low frequency power amplifier complementary pair with UTC
2SB669/A 1
TO-126

1
TO-126C

1
TO-92

*Pb-free plating product number:

2SB649L/2SB649AL

ORDERING INFORMATION
Order Number Pin Assignment
Package Packing
Normal Lead Free Plating 1 2 3
2SB649-x-AB3-R 2SB649L-x-AB3-R SOT-89 B C E Tape Reel
2SB649-x-T6C-K 2SB649L-x-T6C-K TO-126C E C B Bulk
2SB649-x-T60-K 2SB649L-x-T60-K TO-126 E C B Bulk
2SB649-x-T92-B 2SB649L-x-T92-B TO-92 E C B Tape Box
2SB649-x-T92-K 2SB649L-x-T92-K TO-92 E C B Bulk
2SB649A-x-AB3-R 2SB649AL-x-AB3-R SOT-89 B C E Tape Reel
2SB649A-x-T6C-K 2SB649AL-x-T6C-K TO-126C E C B Bulk
2SB649A-x-T60-K 2SB649AL-x-T60-K TO-126 E C B Bulk
2SB649A-x-T92-B 2SB649AL-x-T92-B TO-92 E C B Tape Box
2SB649A-x-T92-K 2SB649AL-x-T92-K TO-92 E C B Bulk

2SB649L-x-AB3-R
(1)Packing Type (1) B: Tape Box, K: Bulk, R: Tape Reel
(2) AB3: SOT-89, T6C: TO-126C, T60: TO-126,
(2)Package Type
T 92: TO-92
(3)Rank (3) x: refer to Classification of hFE
(4)Lead Plating (4) L: Lead Free Plating, Blank: Pb/Sn

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2SB649/A PNP SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATING (Ta=25, unless otherwise specified)

PARAMETER SYMBOL RATING UNIT
Collector-Base Voltage VCBO -180 V
2SB649 -120
Collector-Emitter Voltage VCEO V
2SB649A -160
Emitter-Base Voltage VEBO -5 V
Collector Current IC -1.5 A
Collector Peak Current lC(PEAK) -3 A
TO-126/TO-126C 1.4 W
Collector Power Dissipation TO-92 PD 1 W
SOT-89 500 mW
Junction Temperature TJ +150 C
Storage Temperature TSTG -40 ~ +150 C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector to Base Breakdown Voltage BVCBO IC=-1mA, IE=0 -180 V
Collector to Emitter Breakdown 2SB649 -120
BVCEO IC=-10mA, RBE= V
Voltage 2SB649A -160
Emitter to Base Breakdown Voltage BVEBO IE=-1mA, IC=0 -5 V
Collector Cut-off Current ICBO VCB=-160V, IE=0 -10 A
hFE1 VCE=-5V, IC=-150mA (note) 60 320
2SB649
hFE2 VCE=-5V, IC=-500mA (note) 30
DC Current Gain
hFE1 VCE=-5V, IC=-150mA (note) 60 200
2SB649A
hFE2 VCE=-5V, IC=-500mA (note) 30
Collector-Emitter Saturation Voltage VCE(SAT) Ic=-600mA, IB=-50mA -1 V
Base-Emitter Voltage VBE VCE=-5V, IC=-150mA -1.5 V
Current Gain Bandwidth Product fT VCE=-5V,IC=-150mA 140 MHz
Output Capacitance Cob VCB=-10V, IE=0, f=1MHz 27 pF
Note: Pulse test.

CLASSIFICATION OF hFE
RANK B C D
RANGE 60-120 100-200 160-320

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2SB649/A PNP SILICON TRANSISTOR

TYPICAL CHARACTERISTICS

Typical Output Characteristecs Typical Transfer Characteristics

1.0 -500
.5 0
- 4.
5
VCE=-5V
.0-

TC=25
. 5- 5

.5
- 3 .0

Collector Current, I C (mA)

Collector Current, IC (A)

0.8
-3
-4

5 -100
-2.

PD
=2
0W
0.6 -2.0

5
T a=7
-1.5

-2 5
0.4

25
-1.0 -10

0.2 -0.5mA

I B=0
-1
0 -10 -20 -30 -40 -50 0 -0.2 -0.4 -0.6 -0.8 -1.0
Collector to Emitter Voltage, VCE (V) Base to Emitter Voltage, VBE (V)

DC Current Transfer Ratio Collector to Emitter Saturation Voltage

vs. Collector Current vs. Collector Current
350 -1.2
VCE=-5V IC=10 IB
5
DC Current Transfer Ratio, hFE

300 Ta=7
Collector to Emitter Saturation

-1.0
Voltage, VCE(SAT) (V)

250
25 -0.8
200
-0.6
-25
150
-0.4
100
5

25
-0.2 =7
50 TC
-25
1 0
-1 -10 -100 -1,000 -1 -10 -100 -1,000

Collector Current, IC (mA) Collector Current, IC (mA)

Base to Emitter Saturation Voltage Gain Bandwidth Product

vs. Collector Current vs. Collector Current
1.2 240
VCE=5V
Gain Bandwidth Product, fT (MHz)

IC=10IB Ta=25
200
Base to Emitter Saturation

1.0

Voltage, VBE(SAT) (V)

TC =-25
0.8 160
25
0.6 75 120

0.4 80

0.2 40

0 0
1 3 10 30 100 300 1,000 10 30 100 300 1,000
Collector Current, IC (mA) Collector Current, IC (mA)

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2SB649/A PNP SILICON TRANSISTOR

TYPICAL CHARACTERISTICS(Cont.)

Collector Output Capacitance Area of Safe Operation

vs. Collector to Base Voltage
200
Collector Output Capacitance, Cob (pF)

f=1MHz -3 ICmax
100

Collector Current, IC (A)

IE=0 (-13.3V, -1.5A)
-1.0
50 (-40V, -0.5A)
-0.3 2SB649A
20
DC Operation (TC=25)
-0.1
10
(-120V, -0.038A)
5 -0.03 (-160V,- 0.02A)
2SB649
2 -0.01
-1 -3 -10 -30 -100 -1 -3 -10 -30 -100 -300
Collector to Base Voltage, VCB (V) Collector to Emitter Voltage, VCE (V)

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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