EEE111 Lab Manual

NORTH SOUTH UNIVERSITY

DEPARTMENT OF ELECTRICAL & COMPUTER ENGINEERING

EEE111/ETE111 ANALOG ELECTRONICS I
Course Objective and Outcome Form (Theory)

Course Number and Title: EEE111/ETE111 (Analog Electronics I)
Credit Hours: 3 (Theory) + 1 (Lab)
Semester: Spring 2016

Course Type: Engineering Lecture and Laboratory
Course Prerequisites: EEE141/ETE141(Electrical Circuits-I)
Course Schedule/Timing: Lecture 3 Hours/Week, Lab works 3 Hours/Week
Instructor(s)-in-charge: Course Faculty
Office Hours and Location:
Course Assessment: Project

Lab works: 8
Exam: Quizzes 4, Midterm - 2, Final - 1
Grading policy: Attendance - 5%, Homework / Project - 15%, Quiz 15%, Midterm - 30%,
Final 35%
Course Description: In this course, a variety of electronic devices used in the design of analog electronics
are studied. Basic understanding of semiconductor devices is covered. Emphasis is placed on diodes, BJT,
and FET. Small signal characteristics and models of electronic devices, analysis and design of elementary
electronic circuits are also included. This course has a mandatory laboratory session every week.
Course Objectives: Upon the completion of the course, the student should:
Possess a solid understanding of semiconductor devices and electronic components used
in the design of analog electronics
Learn the required skill to use the electronic devices in designing practical circuits to solve
practical problems.
Gain the ability to conduct, analyze, and interpret experiments, and apply experimental
results to improve processes or circuit systems.
Textbook:
Robert L. Boylestad and Louis Nashelsky, "Electronic Devices and Circuit Theory", 10th or
11th Edition, Prentice Hall of India Private Limited. ISBN 81-203-2064-6
References:
Albert Malvino and David J. Bates, Electronic Principles, 6th/7thEdition, McGraw Hill.
ISBN 9780072975277.
Introductory Circuit Analysis, Robert L. Boylestad, Prentice Hall, 12th Edition
Adel S. Sedra and Kenneth C. Smith, "Microelectronic Circuits", 5th/6th Edition, Oxford
University Press. ISBN 0-19-514252-7.
Topics covered and level of coverage (Topic/Hours):
Course Topics Coverage
Semiconductor Diodes: Ideal Diode, Semiconductor Materials,Extrinsic Materials - 4.5 Hours

n-type and p-type, Semiconductor Diode, Reverse Recovery Time, Zener Diode
Diode Applications: Load Line Analysis, Diode Approximations, Series 4.5 Hours
Diode Configuration with DC inputs, Parallel and Series Parallel
Configurations, AND/OR Gates, Sinusoidal inputs: Half-Wave Rectification,
Full-Wave Rectification, Clippers, Clampers, Application of Zener Diodes
Bipolar Junction Transistor (BJT): Transistor Constructions, Transistor 4.5 Hours
Operation, Common-Base Configuration, Common-Emitter Configuration,
Common-Collector Configuration, Limits of Operation
DC Biasing of Bipolar Junction Transistor: Operating Point, Fixed Bias 4.5 Hours
Circuit, Emitter-Stabilized Bias Circuit, Voltage Divider Bias Circuit, DC Bias
with Voltage Feedback
BJT Small Signal Analysis: Common-Emitter Fixed Bias Configuration, 4.5 Hours
Voltage DividerBias, CE Emitter-Bias Configuration, Emitter-Follower
Configuration, Common Base Configuration
Field-Effect Transistor (FET): JFET and MOSFET 4.5 Hours
FET Biasing: Enhancement Type MOSFET 4.5 Hours
FET Small Signal Analysis: Enhancement Type MOSFET 4.5 Hours
ABET assessment criteria:
b) Experiment & 1. Design and set up experiments.

Interpretation: an ability to
2. Conduct experiments and perform
design and conduct measurements.
experiments, as well as to 3. Detect the experimental faults and
analyze and interpret data troubleshoot them
4. Analyze data and interpret results.
c) Design: an ability to 1. Defining specifications and requirement
design a system, component, analysis of project
or process to meet desired 2. Consideration of technical and non-
needs within realistic technical constraints such as environmental,
constraints such as social, political, ethical, health and safety, and
economic, environmental, sustainability in the design process.
social, political, ethical, 3. Consider alternative designs and choose the
health and safety, optimal solution
manufacturability, and 4. Maintain the systematic and logical design
sustainability approach to complete project
COURSE OUTLINE (LAB)

Lab Days Lab Schedule
Lab 1 Introductory Class & Grouping
Lab 2 Experiment no.1: Simulation &
Lab 3 Experiment no.2: I-V Characteristics of Diode
Lab 4 Experiment no.3: Diode Rectifier Circuits
Lab 5 Experiment no.4: Clipper And Clamper Circuits

Lab 6 Midterm Exam & Experiment no.5: Zener Diode Applications
Lab 7 Experiment no.6: The Output Characteristics Of CE (Common
Emitter) Configuration Of BJT
Lab 8 Experiment no.7: The BJT Biasing Circuit

Lab 9 Experiment no.8: Study of Switching Characteristics of MOSFET
Lab 10 Practice Class
Lab 11 Final Written Test & Practice Class
Lab 12 Viva & Set up Test
Experiment No: 01
Name of the Experiment: Introduction to PSPICE circuit simulator.
1. INTRODUCTION
SPICE is a powerful general purpose analog and mixed-mode circuit simulator that is used to verify circuit
designs and to predict the circuit behavior. This is of particular importance for integrated circuits. It was for
this reason that SPICE was originally developed at the Electronics Research Laboratory of the University of
California, Berkeley (1975), as its name implies:
Simulation Program for Integrated Circuits Emphasis.
PSpice is a PC version of SPICE (which is currently available from OrCAD Corp. of Cadence Design Systems,
Inc.). A student version (with limited capabilities) comes with various textbooks. The OrCAD student edition
is called PSpice AD Lite. Information about Pspice AD is available from the OrCAD website:
http://www.orcad.com/pspicead.aspx
The PSpice Light version has the following limitations: circuits have a maximum of 64 nodes, 10 transistors
and 2 operational amplifiers.
SPICE can do several types of circuit analyses. Here are the most important ones:
Non-linear DC analysis: calculates the DC transfer curve.
Non-linear transient and Fourier analysis: calculates the voltage and current as a function of time
when a large signal is applied; Fourier analysis gives the frequency spectrum.
Linear AC Analysis: calculates the output as a function of frequency. A bode plot is generated.
Noise analysis
Parametric analysis
Monte Carlo Analysis
In addition, PSpice has analog and digital libraries of standard components (such as NAND, NOR, flip-flops,
MUXes, FPGA, PLDs and many more digital components, ). This makes it a useful tool for a wide range of
analog and digital applications.
All analyses can be done at different temperatures. The default temperature is 300K.
The circuit can contain the following components:
Independent and dependent voltage and current sources
Resistors
Capacitors
Inductors
Mutual inductors
Transmission lines
Operational amplifiers
Switches
Diodes
Bipolar transistors
MOS transistors
JFET
MESFET
Digital gates
and other components (see users manual).
2. PSpice with OrCAD Capture (release 9.2 Lite edition)

Before one can simulate a circuit one needs to specify the circuit configuration. This can be done in a variety
of ways. One way is to enter the circuit description as a text file in terms of the elements, connections, the
models of the elements and the type of analysis. This file is called the SPICE input file or source file and has
been described somewhere else (see http://www.seas.upenn.edu/%7Ejan/spice/spice.overview.html).
An alternative way is to use a schematic entry program such as OrCAD CAPTURE. OrCAD Capture is bundled
with PSpice Lite AD on the same CD that is supplied with the textbook. Capture is a user-friendly program
that allows you to capture the schematic of the circuits and to specify the type of simulation. Capture is
non only intended to generate the input for PSpice but also for PCD layout design programs.
The following figure summarizes the different steps involved in simulating a circuit with Capture and PSpice.
We'll describe each of these briefly through a couple of examples.
Step 1: Circuit Creation with Capture Step 2: Specify type of simulation

Create a new Analog, mixed AD project Create a simulation profile
Place circuit parts Select type of analysis: o Bias, DC
Connect the parts sweep, Transient, AC sweep
Specify values and names Run PSpice
Step 3: View the results

Add traces to the probe window
Use cursors to analyze waveforms
Check the output file, if needed
Save or print the results
Figure 1: Steps involved in simulating a circuit with PSpice.

The values of elements can be specified using scaling factors (upper or lower case):
T or Tera (= 1E12); U or Micro (= E-6);

G or Giga (= E9); N or Nano (= E-9);
MEG or Mega (= E6); P or Pico (= E-12)
K or Kilo (= E3); F of Femto (= E-15)
M or Milli (= E-3);
Both upper and lower case letters are allowed in PSpice. As an example, one can specify a capacitor of 225
picofarad in the following ways:
225P, 225p, 225pF; 225pFarad; 225E-12; 0.225N
Notice that Mega is written as MEG, e.g. a 15 megaOhm resistor can be specified as 15MEG, 15MEGohm,
15meg, or 15E6. Be careful not to use M for Mega! When you write 15Mohm or 15M, Spice will read this
as 15 milliOhm!
We'll illustrate the different types of simulations for the following circuit:
Figure 2: Circuit to be simulated (screen shot from OrCAD Capture).
2.1 Step 1: Creating the circuit in Capture

2.1.1 Create new project:
1. Start OrCAD Lite as shown below:
Note that the only program you need to start is Capture Lite Edition. The other programs will run
automatically as theyre needed.
2. Click the Create Document button on the toolbar.
3. The following dialog will appear. Fill in the information as shown.

4. The following dialog will appear:
Choose Create a blank project and click OK.
5. The schematic editor will open. Enter the following schematic into the program:
A new page will open in the Project Design Manager as shown below.
Figure 3: Design manager with schematic window and toolbars (OrCAD screen capture)
2.1.2. Place the components and connect the parts

1. Click on the Schematic window in Capture.
2. To Place a part go to PLACE/PART menu or click on the Place Part Icon. This will open a dialog box
shown below.
Figure 4: Place Part window
3. Select the library that contains the required components. Type the beginning of the name in the Part box.
The part list will scroll to the components whose name contains the same letters. If the library is not available,
you need to add the library, by clicking on the Add Library button. This will bring up the Add Library window.
Select the desired library. For Spice you should select the libraries from the Capture/Library/PSpice folder.
Analog: contains the passive components (R,L,C), mutual inductane, transmission line,
and voltage and current dependent sources (voltage dependent voltage source E, current-dependent
current source F, voltage-dependent current source G and current-dependent voltage source H).
Source: give the different type of independent voltage and current sources, such as Vdc,
Idc, Vac, Iac, Vsin, Vexp, pulse, piecewise linear, etc. Browse the library to see what is available.
Eval: provides diodes (D), bipolar transistors (Q), MOS transistors, JFETs (J),
real opamp such as the u741, switches (SW_tClose, SW_tOpen), various digital gates
and components.
Abm: contains a selection of interesting mathematical operators that can be applied to signals, such as
multiplication (MULT), summation (SUM), Square Root (SWRT),
Laplace (LAPLACE), arctan (ARCTAN), and many more.
Special: contains a variety of other components, such as PARAM, NODESET, etc.
Part Name Symbol Part Name Symbol

Resistor R Sinusoidal VSIN
Voltage Source
Capacitor C Sinusoidal ISIN

Current Source
Inductor L Voltage Pulse VPULSE
Ground AGND Current Pulse IPULSE
DC Voltage VDC Voltage VEXP

Source exponential
source
DC Current IDC Current IEXP

Source exponential
source
AC Voltage VAC Voltage VPWL

Source piecewise
linear source
AC Current VDC Current IPWL
Source piecewise
linear source
VCVS Voltage- E Voltage VIEWPOINT
Controlled Viewpoint
Voltage Source
CCCS F Current Iprobe IPROBE
Current-
Controllled
Current Source
VCCS G
Voltage-
Controlled
Current Source
CCVS - Current- H
Controlled
Voltage Source
4. Place the resistors, capacitor (from the Analog library), and the DC voltage and current source.
You can place the part by the left mouse click.
You can rotate the components by clicking on the R key.
To place another instance of the same part, click the left mouse button again.
Hit the ESC key when done with a particular element.
You can add initial conditions to the capacitor. Double-click on the part; this will open the
Property window that looks like a spreadsheet. Under the column, labeled IC, enter the value of the
initial condition, e.g. 2V. For our example we assume that IC was 0V (this is the default value).
5. After placing all part, you need to place the Ground terminal by clicking on the GND icon (on
the right side toolbar see Fig. 3). When the Place Ground window opens, select GND/CAPSYM and give
it the name 0 (i.e. zero). Do not forget to change the name to 0, otherwise PSpice will give an error or
"Floating Node". The reason is that SPICE needs a ground terminal as the reference node that has the
node number or name 0 (zero).
Figure 5: Place the ground terminal box; the ground terminal should have the name 0
6. Now connect the elements using the Place Wire command from the menu (PLACE/WIRE) or by clicking
on the Place Wire icon.
7. You can assign names to nets or nodes using the Place Net Alias command (PLACE/NET ALIAS menu).
We will do this for the output node and input node. Name these Out and In, as shown in Figure 2.
2.1.3. Assign Values and Names to the parts

1. Change the values of the resistors by double-clicking on the number next to the resistor. You can
also change the name of the resistor. Do the same for the capacitor and voltage and current source.
2. If you haven't done so yet, you can assign names to nodes (e.g. Out and In nodes).
3. Save the project
2.1.4. Netlist
The netlist gives the list of all elements using the simple format:
R_name node1 node2 value
C_name nodex nodey value, etc.
1. You can generate the netlist by going to the PSPICE/CREATE NETLIST menu.
2. Look at the netlist by double clicking on the Output/name.net file in the Project Manager Window
(in the left side File window).
Note on Current Directions in elements:

The positive current direction in an element such as a resistor is from node 1 to node 2. Node 1 is either the
left pin or the top pin for an horizontal or vertical positioned element (.e.g a resistor). By rotating the element
180 degrees one can switch the pin numbers. To verify the node numbers you can look at the netlist:
e.g. R_R2 node1 node2 10k

e.g. R_R2 0 OUT 10k
Since we are interested in the current direction from the OUT node to the ground, we need to rotate the
resistor R2 twice so that the node numbers are interchanged:
R_R2 OUT 0 10k
2.2 Step 2: Specifying the type of analysis and simulation

As mentioned in the introduction, Spice allows you do to a DC bias, DC Sweep, Transient with Fourier
analysis, AC analysis, Montecarlo/worst case sweep, Parameter sweep and Temperature sweep. We will
first explain how to do the Bias and DC Sweep on the circuit of Figure 2.
2.2.1 BIAS or DC analysis
1. With the schematic open, go to the PSPICE menu and choose NEW SIMULATION PROFILE.
2. In the Name text box, type a descriptive name, e.g. Bias
3. From the Inherit From List: select none and click Create.
4. When the Simulation Setting window opens, for the Analyis Type, choose Bias Point and click OK.
5. Now you are ready to run the simulation: PSPICE/RUN
6. A window will open, letting you know if the simulation was successful. If there are errors, consult
the Simulation Output file.
7. To see the result of the DC bias point simulation, you can open the Simulation Output file or go
back to the schematic and click on the V icon (Enable Bias Voltage Display) and I icon (current
display) to show the voltage and currents (see Figure 6).
The check the direction of the current, you need to look at the netlist: the current is positive flowing from
node1 to node1 (see note on Current Direction above).
Figure 6: Results of the Bias simulation displayed on the schematic

2.2.2 DC Sweep simulation
We will be using the same circuit but will evaluate the effect of sweeping the voltage source between 0 and
20V. We'll keep the current source constant at 1mA.
1. Create a new New Simulation Profile (from the PSpice Menu); We'll call it DC Sweep
2. For analysis select DC Sweep; enter the name of the voltage source to be swept: V1. The
start and end values and the step need to be specified: 0, 20 and 0.1V, respectively (see Fig. below).
See the
Start,
End &
Increment
value
Figure 7: Setting for the DC Sweep simulation.

3. Run the simulation. PSpice will generate an output file that contains the values of all voltages
and currents in the circuit.
2.3 Step 3: Displaying the simulation Results

PSpice has a user-friendly interface to show the results of the simulations. Once the simulation is
finished a Probe window will open.
Figure 8: Probe window

1. From the TRACE menu select ADD TRACE and select the voltages and current you like to display. In our case
we'll add V(out) and V(in). Click OK.
Figure 9: Add Traces window

2. You can also add traces using the "Voltage Markers" in the schematic. From the PSPICE menu select
MARKERS/VOLTAGE LEVELS. Place the makers on the Out and In node. When done, right click and select End
Mode.
Figure 10: Using Voltage Markers to show the simulation result of V(out) and V(in)
3. Go to back to PSpice. You will notice that the waveforms will appear.
4. You can add a second Y Axis and use this to display e.g. the current in Resistor R2, as shown
below. Go to PLOT/Add Y Axis. Next, add the trace for I(R2).
5. You can also use the cursors on the graphs for Vout and Vin to display the actual values at
certain points. Go to TRACE/CURSORS/DISPLAY
6. The cursors will be associated with the first trace, as indicated by the small small
rectangle around the legend for V(out) at the bottom of the window. Left click on the first trace.
The value of the x and y axes are displayed in the Probe window. When you right click on V(out)
the value of the second cursor will be given together with the difference between the first and
second cursor.
7. To place the second cursor on the second trace (for V(in)), right click the legend for V(in).
You'll notice the outline around V(in) at the bottom of the window. When you right click the
second trace the cursor will snap to it. The values of the first and second cursor will be shown in
Probe window.
8. You can chance the X and Y axes by double clicking on them.
9. When adding traces you can perform mathematical calculations on the traces, as indicated in the
Add Trace Window to the right of Figure 9.
Figure 11: Result of the DC sweep, showing Vout, Vin and the current through resistor R2. Cursors were
used for V(out) and V(in).
Experiment No: 2
Name of the Experiment: I-V Characteristics of diode.
Objective :
Study the I-V characteristic of diode.
Theory :
A diode is a bi-polar device that behaves as the short circuit when it is in forward bias and as an open
circuit when it is in reverse bias condition.
Figure 2.1 : Schematic Diagram of Diode. Figure 2.2 : P - N Junction Diode .
There are two types of biasing condition for a diode:
1. When the diode is connected across a voltage source with positive polarity of source connected
to p side of diode and negative polarity to n side, then the diode is in forward bias condition.
2. When the diode is connected across a voltage source with positive polarity of source connected
to n side of diode and negative polarity to p side, then the diode is in reverse bias condition.
Figure 2.3: Forward Bias connection. Figure 2.4: Reverse Bias connection.
If the input voltage is varied and the current through the diode corresponds to each voltage are taken
then the plot of diode current (Id) vs diode voltage (VD) will be follows:
Figure 2.5 : I - V Characteristics of Diode.
At the reverse bias condition the amount of current flows through the diode is very small (at
microampere range). But if the voltage continuously increases in reverse direction, at a certain value the
diode will break down and huge amount of current will flow in reverse direction. This is called
breakdown of diode. In laboratory the breakdown will not tested because it will damages the diode
permanently.
From the characteristics curve it can be seen that, a particular forward bias voltage (VT) is required to
reach the region of upward swing. This voltage, VT is called the cut-in voltage or threshold voltage of
diode. For Si diode the typical value of threshold voltage is 0.7 volt and for Ge diode is 0.3 volt.
Equipments And Components :

Serial no. Component Details Specification Quantity
1. p-n junction diode 1N4007 1 piece
2. Resistor 1K 1 piece
3. DC power supply 1 unit
4. Signal generator 1 unit
5. Trainer Board 1 unit
6. Oscilloscope 1 unit
7. Digital Multimeter 1 unit
8. Chords and wire as required
Experimental Setup :
+ VR - + Ch -
1K
-
Ch
VAC 10 Vp-p 1K
Vd
Vdc 100 Hz
+
Figure 2.6 : Circuit Diagram for Obtaining Diode Figure 2.7 : Circuit Diagram for Obtaining
Diode Forward Characteristics. Characteristics From Oscilloscope.
Procedure :
1. Measure the resistance accurately using multimeter.
2. Construct the circuit as shown in figure - 1.6.
3. Vary input voltage Vdc. Measure Vdc, Vd, VR for the given values of Vd and record data on data
table. Obtain maximum value of Vd without increasing Vdc beyond 25 volt.
4. Calculate the values of Id using the formula, Id = VR / R.
5. Construct the circuit as shown in figure - 1.7.
6. Make proper connection and observe the output from the oscilloscope.
7. Repeat the step 5 and 6 by increasing the input supply frequency 5 KHz.
Data Table :
Vdc (volt) Measured Vdc (volt) Vd (volt) VR (volt) Id = VR / R (mA)

0
1
2
4
6
8
10
12
14
16
Report :
1. Draw the I - V characteristics curve of diode from the reading obtain in this experiment.
2. Calculate static resistance for Id = 5 mA and Id = 10 mA.
3. Determine the Q- point for the circuit in figure - 6, when Vdc = 8 volt.
4. Add the PSPICE simulation waveforms of all the experimental circuits.
Experiment No: 03
Name of the Experiment: Diode rectifier circuits.
Objective:
Study of different diode rectifier circuits.
Theory:
A rectifier converts an AC signal into a DC signal. From the characteristic curve of a diode we observe
that if allows the current to flow when it is in the forward bias only. In the reverse bias it remains open.
So, when an alternating voltage (signal) is applied across a diode it allows only the half cycle (positive
half cycle depending on the orientation of diode in the circuit) during its forward bias condition, other
half cycle will be clipped off. In the output the load will get DC signal.
Diode rectifier can be categorized in two major types. They are -

1. Half-wave rectifier.
2. Full-wave rectifier.
Half - Wave Rectifier: Half-wave rectifier can be built by using a single diode. The circuit diagram and
the wave shapes of the input and output voltage of half wave rectifier are shown bellow (figure 2.1) -
D
+
Vs RL VO
-
Figure 3.1: Half Wave Rectifier.
The major disadvantages of half wave rectifier are -

In this circuit the load receives approximately half of input power.
Average DC voltage is low.
Due to the presence of ripple output voltage is not smooth one.
Full Wave Rectifier: in the full-wave rectifier both the half cycle is present in the output. Two circuits are
used as full-wave rectifier are shown bellow -
a) Full-wave rectifier using center-tapped transformer.
b) Full-wave bridge rectifier.
Full-wave rectifier using center-tapped transformer: two diodes will be connected to the ends of the
transformer and the load will be between the diode and center tap. The circuit diagram and the wave
shapes are shown in bellow (figure 2.2) -
D1
12 V RL
12 V
Vs
12 V - VO +
D2
Figure 3.2: Full Wave Rectifier Using Center Tapped Transformer.
Full-wave rectifier using center-tapped transformer circuit has some advantages over full-wave rectifier.
Those are -
Wastage of power is less.
Average DC output increase significantly.
Wave shape becomes smoother.
The disadvantages of full-wave rectifier using center-tapped transformer are -

Require more space and becomes bulky because of the transformer.
Not cost effective (for using transformer).
Full-wave bridge rectifier: a bridge rectifier overcomes all the disadvantages of described above. Here
four diodes will be connected as bridge connection. The circuit diagram and the wave shapes are shown
in bellow (figure 2.3) -
RL
Vs
- VO +
Figure 3.3: Full Wave Bridge Rectifier.

This rectifier however cannot produce a smooth DC voltage. It produces some ripple in the output. This
ripple can be reducing by using filter capacitor across the load.
Equipments And Components:

3. Capacitor 0.22F, 10F 1 piece each
Experimental Setup:
+ +
D1 D3
10 K
10 Vp-p 10 Vp-p
1 KHz 10 K C VO 1 KHz C VO
D4 D2
- -
Figure 3.4 : Experimental Circuit 1. Figure 3.5 : Experimental Circuit 2.
Procedure:
1. Connect the circuit in breadboard as shown in figure 2.4 without capacitor.
2. Observe the output and input voltages in the oscilloscope and draw them.
3. Connect the 0.22F capacitor and repeat step 2.
4. Connect the 10F capacitor and repeat step 2. How does the output wave-shape differ from
that in step 3?
5. Vary the frequency from 10 KHz to 100 Hz. What effects do you observe when frequency is
changed?
6. Connect the circuit breadboard as shown in figure 2.5 without capacitor.
7. Observe the output and input voltages in the oscilloscope and draw them.
8. Connect the 0.22F capacitor and repeat step 7.
9. Connect the 10F capacitor and repeat step 7. How does the output wave-shape differ from
that in step 8?
10. Vary the frequency from 10 KHz to 100 Hz. What effects do you observe when frequency is
changed?
Report:
1. Write the answers that were asked during the working procedure.
2. Draw the input wave, output wave (without and with capacitor) for both the circuits.
3. What is the effect in output for changing input signal frequency for both the circuits
(without and with capacitor)?
4. What is the function of capacitor in the both circuits? Why a capacitor of higher value is
preferable?
Experiment No: 04
Name of the Experiment: Clipper and Clamper circuits.
Objective:
Study of Clipper and Clamper circuits.
Theory:
Clipper: Clippers remove signal voltage above and below a specified level. In the experiment no. 2, half
wave rectifier can also be called as a clipper circuit. Because it clipped off the negative half cycle of the
input signal.
A diode connected in series with the load can clipped off any half cycle of input depending on the
orientation of the diode. (Figure 3.1) -
+
Vs RL VO
-
Figure 4.1: Simple Diode Clipper.
It is also possible to clip off a certain part of the input signal bellow a specified signal level by using a
voltage source in reverse bias condition with the diode. If a battery of V volts is added to it, then for Vs
above (V+0.7) volts the diode becomes forward bias and turns ON. The load receives above this voltage
level.
V D
+
Vs RL VO
-
Figure 4.2: Clipper Circuit Using Bias Diode.

A diode connected in parallel with the load can clip off the input signal above 0.7 volts of one half cycle
depending on the connection of the diode. Using two diodes in parallel in opposite direction both the
half cycle can be limited to 0.7 volts.
+
Vs D RL VO
-
Figure 4.3: Parallel Clipper Circuit.
Using a biased diode it is possible to limit the output voltage to a specified level depending on the
attached battery voltage. Either the half cycles or both of them can be clipped off above a specified
level.
D1 D2 +
Vs RL VO
-
V2 V1
Figure 4.4: Biased Parallel Clipper Circuit.
In practical case for both the series and parallel clippers voltage source is not added. Required voltage
levels are maintained by adding more semiconductor diode.
Clamper: A DC clamper circuit adds a DC voltage to the input signal. For instance, if the incoming signal
varies from -10 volts to +10 volts, a positive DC clamper will produce an output that ideally swing from 0
volts to 20 volts and a negative clamper would produce an output between 0 volts to -20 volts.
+
Vs D RL VO
-
Figure 4.5: Clamper Circuit.

3. Capacitor 0.1F 1 piece
6. DC power Supply 1 unit
Experimental Setup:
VB VB
D D
+ +
Vs 100 K VO Vs 100 K VO
- -
(a) (b)
Figure 4.6: Experimental Circuit 1.

100 K 100 K
+ +
D D
Vs VO Vs VO
VB VB
- -
(a) (b)
0.1 F 0.1 F
D + D
+
Vs 100 K VO Vs 100 K VO
- -
VB VB
(a) (b)
Procedure :
1. Connect the circuit as shown in the figure 3.6. Using a sinusoidal voltage source with 5 volts
peak (Vm) and 1kHz frequency.
2. Observe the output wave shapes for various values of VB and draw VB = 2.5 volts for each
circuit.
3. Do the same as in step 1 and 2 for the circuits in figure 3.7 with Vs wave shapes as drawn
beside each figure having Vm = 5 volts. Parallel Branch 1 of circuit of figure 3.7(a) and Branch
2 of circuit of figure 3.7(b) and observe output.
4. For the clamper circuits of figure 3.8 do the same steps as step 1 and 2 with Vs wave shapes
as drawn beside each figure having Vm = 5 volts.
Report :
1. Sketch all the waveforms observed on the oscilloscope.
2. What role dose the value of capacitor used in the clamping circuit play in order to obtain
proper clamping?
Experiment No: 05
Name of the Experiment: Zener Diode applications.
Objective:
Study of the Zener Diode applications.
Theory:
The diodes we have studied before do not operate in the breakdown region because this may damage
them. A Zener diode is different; it is a silicon diode that the manufacturer has optimized for operation
in the breakdown region. It is used to build voltage regulator circuits that circuits that hold the load
voltage almost constant despite large change in line voltage and load resistance. The symbol of Zener
diode shows in figure 5.1.
Figure 5.1 : Symbol of Zener Diode.
Figure 5.2 : I - V Characteristics of Zener Diode.
The Zener diode may have a breakdown voltage from about 2 to 200 volts. These diodes can operate in
any of three regions forward, leakage and breakdown. Figure 4.2 shows the I-V characteristics curve of
Zener diode.
In the forward region it works as an ordinary diode.

In the leakage region (between zero and breakdown) it has only a small reverse saturation
current.
In the breakdown it has a sharp knee, followed by an almost vertical increase in current
without changing the voltage.
The voltage is almost constant, approximately equal to Vz over most of the breakdown
region.
Equivalent circuits of Zener Diode : Two approximation are used for Zener Diode equivalent circuit.
First Approximation : As the voltage remains constant across the Zener diode though the current
changes through it, it is considered as a constant voltage source according to the first approximation.
= VZ
Second Approximation : A Zener resistance is in series with the ideal voltage source is approximated.
RZ
=
VZ
Load Regulation: Load regulation is the change in output voltage due the change per mA load current.
Load Regulation = Vo/I
Line Regulation: Line regulation is the change in output voltage due the change per volt input voltage.
Line Regulation = Vo/Vs
Equipments and Components:

1. Zener diode 5 volts 1 piece
2. Resistor 220, 470, 1K 1 piece each
3. POT 10K 1 unit
5. DC Power Supply 1 unit
Experimental Setup:
470 470
+
220
VZ V VL
10 K
-
Figure 5.3 : Experimental Circuit 1. Figure 5.4 : Experimental Circuit 2.
Procedure :
1. Connect the circuit as shown in the figure 4.3
2. Vary the supply voltage from zero volt, complete the Table 4.1.
3. Connect the circuit as shown in the figure 4.4
4. Keep the POT at maximum position and power up the circuit. Apply 10 as V.
5. Gradually decrease the POT resistance and complete the Table 4.2.
6. Replace load with 1K resistance, vary the supply voltage and take reading for Table 4.3.
Table 5.1 : Data for I - V characteristics.
V (volts) VR (volts) Vz (volts) Iz = VR / R

(mA)
0
1
4
5
6
6.5
7
7.5
8
8.5
9
9.5
10
11
12
14
Table 5.2 : Data for regulation due to load variation.
V220 (mV) VL (volts) IL (Amp)
Table 5.3 : Data for regulation due supply voltage variation.
V (volts) VL (volts)
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
Report :
1. Plot the I - V characteristics of Zener diode. Determine the Zener breakdown voltage from
the plot.
2. Plot IL vs VL for the data table 4.2. Find the voltage regulation.
3. Plot VL vs V for the data table 4.3. Find the voltage regulation.
Experiment No: 06
Name of the Experiment : The output characteristics of CE (common emitter) configuration of

BJT.
Objective:
Study of the output characteristics of CE (common emitter) configuration of BJT.
Theory :
Unlike the diode, which has two doped region, a transistor has three doped region. They are as follows
a) Emitter,
b) Base and
c) Collector.
These three doped regions form two junctions: One between the emitter and base and other between
the collector and the base. Because of these it can be thought as combination of two diodes, the emitter
and the base form one diode and the collector and base form another diode. The emitter is heavily doped.
Its job is to emit or inject free majority carrier (electron for NPN and hole for PNP) into the base. The base
is lightly doped and very thin. It passes the most of the emitter-injected electron (for NPN) into the
collector. The doping level of the collector is between emitter and base. Figure 5.1 shows the biased NPN
transistor.
RC
+
RB
VCE
+ VCC
-
VBB VBE
Figure 5.1 : Biasing of an NPN transistor.
If the VBB is greater than the barrier potential, emitter electron will enter base region. The free electron
can flow either into the base or into the collector. As base lightly doped and thin, most of the free electron
will enter into the collector.
There are three different current in a transistor. They are emitter current (IE), collector current (IC) and
the base current (IB) are shows in figure 5.2.
IC
IB
IE
Figure 6.2 : Different current in transistor.

IC
Here, IE = IC + IB, and the current gain =
IB
Characteristics Curve : The characteristics of a transistor is measured by two characteristics curve. They
are as follows
a) Input characteristics curve.
b) Output characteristics curve.
Input Characteristics Curve : Input characteristics is defined as the set of curves between input current
(IB) vs. input voltage (VBE) for the constant output voltage (VCE). It is the same curve that is found for a
forward biased diode.
Output Characteristics Curve : Output characteristics is defined by the set of curves between output
current (IC) vs. output voltage (VCE) for the constant input current (IB). The curve has the following
features
It has three regions namely Saturation, Active and Cutoff region.
The rising part of the curve, where VCE is between 0 and approximately 1 volt is called
saturation region. In this region the collector diode is not reversed biased.
When the collector diode of the transistor becomes reverse biased, the graph becomes
horizontal. In this region the collector remains almost constant. This region is known as
the active region. In applications where the transistor amplifies weak radio and TV signal,
it will always be operation in the active region.
When the base current is zero, but there is some collector current. This region of the
transistor curve is known as the cutoff region. The small collector current is called
collector cutoff current.
For different value of base current (IB) an individual curve can be obtained.
Figure 6.3 : (a) Input Characteristic, (b) Output Characteristic of NPN transistor.
Equipments And Components:

1. Transistor C828 1 piece
2. Resistor 470, 2.2K, 3.3K, 1 piece each

4.7K, 10K, 470K
3. POT 100K 1 unit
Experimental Setup:
10 K
+
R1 10 VR470 470
-
+
470 K
VCE 30 V
+ VRB - +
-
R 2.2 K VBE
Figure 6.4: Experimental Circuit.
Procedure:
1. Connect the circuit as shown in the figure 5.4. Use 2.2 K as R.
2. Measure VRB and calculate IS using IE = VRB / RB. (We will assume that IB to be constant for a
particular setup at input.)
3. Measure the voltages of VCE and VR470. And calculate IC using IC = VR470 / R470.
4. Take at least 10 reading by varying the POT.

5. Repeat step 1 to 4 with resistance R as 3.3 K and 4.7 K.
Table 6.1 : Data for I - V characteristics of transistor.
RB=_________ K , R470= __________
R VRB IB = VRB / RB VCE VR470 IC = VR470 / R470

(K) (Volt) (A) (volts) (volts) (mA)
2.2
3.3
4.7
Report:
1. Plot the graph of IC vs. VCE with necessary details. Show the different regions of operation.
2. Plot a hypothetical output characteristic using PNP transistor.
3. Find for the three different condition.
Experiment No: 07
Name of the Experiment: The BJT Biasing Circuits.
Objective:
Study of the BJT Biasing Circuits.
Theory:
Biasing a BJT circuit means to provide appropriate direct potentials and currents, using external sources,
to establish an operating point or Q-point in the active region. Once the Q-point is established, the time
varying excursions of input signal should cause an output signal of same waveform. If the output signal is
not a faithful reproduction of the input signal, for example, if it is clipped on one side, the operating
point is unsatisfactory and should be relocated on the collector characteristics. Therefore, the main
objective of biasing a BJT circuit is to choose the proper Q-point for faithful reproduction of the input
signal. There are different types of biasing circuit. However, in the laboratory, we will study only the
fixed bias and self bias circuit. In the fixed bias circuit, shown if figure 6.1, the base current I B is
determined by the base resistance RB and it remains constant. The main drawback of this circuit is the
instability of Q-point with the variation of of the transistor. In the laboratory, we will test the stability
using two transistors with different . In the self bias circuit shown if figure 6.2, this problem is
overcome by using the self biasing resistor RE to the emitter terminal.

1. NPN Transistor C828, BD135 1 piece each

2. Resistor 470, 560, 220K 1 piece each
3. POT 10K 1 unit

Experimental Setup:
RB 100 K RC 470
220 K
RB1 10 K RC 470
10 V
RB2 10 K 560
Procedure:
1. Arrange the circuit shown in figure - 6.1 by C828. Record RC and set RB to maximum value.
2. Decrease POT RB gradually so that VCE = VCC / 2.
3. Measure voltage across RC and VCE.
4. Record the Q-point (VCE, IC).
5. Replace the C828 transistor by BD135 and repeat step 3 and 4.
6. Arrange the circuit shown in figure - 6.2 by C828. Record RC and set RB to minimum value.
7. Increase POT RB2 gradually so that VCE = VCC / 2.
8. Measure voltage across RC and VCE.
9. Record the Q-point (VCE, IC).
10. Replace the C828 transistor by BD135 and repeat step 8 and 9.
Data Sheet :
Table 7.1 : Data for Fixed Bias Circuit.
Transistor RC VC IC = VC / RC VCE Q-point

() (volt) (Amp) (volt)
C828
BD135
Table 7.2 : Data for Self Bias Circuit.
Transistor RC VC IC = VC / RC VCE Q-point

() (volt) (Amp) (volt)
C828
BD135
Report:
1. Which circuit shows better stability? Explain in the context of the results obtained in the
laboratory.
2. Draw the DC load line for both the circuits and show the Q-point.

Experiment No: 08
Name of the Experiment: Study of Switching Characteristics
Introduction:
The most common transistor types are the Metal Oxide Semiconductor Field Effect Transistors
(MOSFETs) and the Bipolar Junction Transistors (BJT). BJTs based circuits dominated the
electronics market in the 1960's and 1970's. Nowadays most electronic circuits, particularly
integrated circuits (ICs), are made of MOSFETs. The BJTs are mainly used for specific applications like
analog circuits (e.g. amplifiers), high-speed circuits or power electronics.
There are two main differences between BJTs and FETs. The first is that FETs are charge- controlled
devices while BJTs are current or voltage controlled devices. The second difference is that the
input impedance of the FETs is very high while that of BJT is relatively low.
As for the FET transistors, there are two main types: the junction field-effect transistor (JFET)
and the metal oxide semiconductor field effect transistor (MOSFET). The power dissipation of a JFET
is high in comparison to MOSFETs. Therefore, JFETs are less important if it comes to the
realization of ICs, where transistors are densely packed. The power dissipation of a JFET based
circuit would be simply too high. The combination of n- type and p-type MOSFETs allow for the
realization of the Complementary Metal Oxide Semiconductor (CMOS) technology, which is nowadays
the most important technology in electronics. All microprocessors and memory products are based
on CMOS technology. The very low power dissipation of CMOS circuits allows for the integration
of millions of transistors on a single chip. In this experiment, we will concentrate on the
MOSFET transistor. We will investigate its characteristics and study its behavior when used as a switch.
Theory:
MOSFETs Structure and Physical Operation
The MOSFETs are the most widely used FETs. Strictly speaking, MOSFET devices belong to the
group of Insulated Gate Field Effect Transistor (IGFETs). As the name implies, the gate is
insulated from the channel by an insulator. In most of the cases, the insulator is formed by a
silicon dioxide (SiO2), which leads to the term MOSFET. MOSET like all other IGFETs has three
terminals, which are called Gate (G), Source (S), and Drain (D). In certain cases, the transistors have a
fourth terminal, which is called the bulk or the body terminal. In PMOS, the body terminal is held at
the most positive voltage in the circuit and in NMOS, it is held at the most negative voltage in the
circuit.
There are four types of MOSFETs: enhancement n-type MOSFET, enhancement p-type MOSFET,
depletion n-type MOSFET, and depletion p-type MOSFET. The type depends whether the channel
between the drain and source is an induced channel or the channel is physically implemented and
whether the current owing in the channel is an electron current or a hole current.
The cross section of an enhancement NMOS transistor is shown in figure below. If we put the
drain and source on ground potential and apply a positive voltage to the gate, the free holes
(positive charges) are repelled from the
Schematic cross section of an enhancement type NMOS transistor
Symbols for Enhancement NMOS Transistor
Symbols for Enhancement PMOS Transistor
region of the substrate under the gate (channel region) due to the positive voltage applied to the gate.
The holes are pushed away downwards into the substrate leaving behind a depletion region. At the
same time, the positive gate voltage attracts electrons into the channel region.
When the concentration of electrons near the surface of the substrate under the gate is higher than
the concentration of holes, an n region is created, connecting the source and the drain regions. The
induced n-region thus forms the channel for current flow from drain to source. The channel is only a
few nanometers wide. Nevertheless, the entire current transport occurs in this thin channel between
drain and source.
A common application of MOSFETs is switches in analog and digital circuits.

Switches in analog circuits can be used for example in data acquisition systems, where they
serve as analog multiplexors, which allow the selection of one of several data inputs.
A simple example of a switching circuit based on an n-type enhancement transistor and a

resistor is shown below. The voltage applied to the gate controls the conductance of the channel. A
zero or low value of VGS, the conductance is very low so that is the transistor acts like an open circuit
and no current flows through the load resistor RL. When VGS exceeds the threshold, the channel
conductance becomes higher and the transistor acts like a closed switch. The channel resistance
is not getting zero but the resistance is getting small so that the output voltage Vout is getting small.
Fig.(a) below shows an NMOS switching FET and its models for Vin = 0 (Fig. (b)) and Vin = +5V (Fig.
(c)). In each case, the FET is modeled as a mechanical switch.
Fig: NMOS transistor switch
As for PMOS, a negative value of VGS has to be applied to turn the transistor on. The operation can
be described using the curves shown in figure below. When the input voltage, VGS, of the transistor
shown is zero, the MOSFET conducts virtually no current, and the output voltage, Vout, is equal
to VDD. When V GS is equal to 5V , the MOSFET Q-point moves from point A to point B along the
load line, with V DS = 0.5V . Thus, the circuit acts as an inverter. The inverter forms the basis of all MOS
logic gates.
Fig: MOSFET switching characteristics


1. MOSFET IRF540 1 piece each
2. Resistor 1K 1 piece each
3. POT 1 unit
Experimental Setup:
Procedure:
1. Set VGS to zero and record the VDS, VL and ID.
2. Increase the gate voltage VGS gradually and record the readings.
3. Take reading until ID = 20mA (or the saturation current of the MOSFET).
4. Note the condition of VDS and ID of steps 1 and 3.
5. Repeat the experiment for VDD = 15 Volts.
VDD = 15V VDD = 20V

VGS VDS VL ID VGS VDS VL ID
Report:

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NORTH SOUTH UNIVERSITY

DEPARTMENT OF ELECTRICAL & COMPUTER ENGINEERING

Course Objective and Outcome Form (Theory)

Semester: Spring 2016

Course Prerequisites: EEE141/ETE141(Electrical Circuits-I)

Course Schedule/Timing: Lecture 3 Hours/Week, Lab works 3 Hours/Week

Instructor(s)-in-charge: Course Faculty

Office Hours and Location:

Course Assessment: Project

Topics covered and level of coverage (Topic/Hours):

Course Topics Coverage

Semiconductor Diodes: Ideal Diode, Semiconductor Materials,Extrinsic Materials - 4.5 Hours

ABET assessment criteria:

b) Experiment & 1. Design and set up experiments.

COURSE OUTLINE (LAB)

Lab 5 Experiment no.4: Clipper And Clamper Circuits

Lab 8 Experiment no.7: The BJT Biasing Circuit

Name of the Experiment: Introduction to PSPICE circuit simulator.

2. PSpice with OrCAD Capture (release 9.2 Lite edition)

Step 1: Circuit Creation with Capture Step 2: Specify type of simulation

Step 3: View the results

Figure 1: Steps involved in simulating a circuit with PSpice.

T or Tera (= 1E12); U or Micro (= E-6);

Figure 2: Circuit to be simulated (screen shot from OrCAD Capture).

2.1 Step 1: Creating the circuit in Capture

2. Click the Create Document button on the toolbar.

3. The following dialog will appear. Fill in the information as shown.

4. The following dialog will appear:

Choose Create a blank project and click OK.

2.1.2. Place the components and connect the parts

Figure 4: Place Part window

Part Name Symbol Part Name Symbol

Capacitor C Sinusoidal ISIN

Inductor L Voltage Pulse VPULSE

Ground AGND Current Pulse IPULSE

DC Voltage VDC Voltage VEXP

DC Current IDC Current IEXP

AC Voltage VAC Voltage VPWL

2.1.3. Assign Values and Names to the parts

Note on Current Directions in elements:

e.g. R_R2 node1 node2 10k

R_R2 OUT 0 10k

2.2 Step 2: Specifying the type of analysis and simulation

Figure 6: Results of the Bias simulation displayed on the schematic

Figure 7: Setting for the DC Sweep simulation.

2.3 Step 3: Displaying the simulation Results

Figure 8: Probe window

Figure 9: Add Traces window

Name of the Experiment: I-V Characteristics of diode.

Figure 2.1 : Schematic Diagram of Diode. Figure 2.2 : P - N Junction Diode .

There are two types of biasing condition for a diode:

Figure 2.5 : I - V Characteristics of Diode.

Equipments And Components :

Vdc (volt) Measured Vdc (volt) Vd (volt) VR (volt) Id = VR / R (mA)

Name of the Experiment: Diode rectifier circuits.

Diode rectifier can be categorized in two major types. They are -

Figure 3.1: Half Wave Rectifier.

The major disadvantages of half wave rectifier are -

Figure 3.2: Full Wave Rectifier Using Center Tapped Transformer.

RB=_ K , R470= __