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    MMD70R600P

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    BoKi PoKi
    The MMD70R600P is a 700V 0.6Ω N-channel MOSFET that provides low power loss through high-speed switching and low on-resistance using MagnaChip's advanced super junction technology. It has applications in power supply stages, motor controls, and DC-DC converters. Key parameters include a maximum drain-source voltage of 750V, on-resistance of 0.6Ω or less, threshold voltage of 3V typical, and continuous drain current of 7.3A.

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    MMD70R600P

    Uploaded by

    BoKi PoKi
    772 views10 pages
    The MMD70R600P is a 700V 0.6Ω N-channel MOSFET that provides low power loss through high-speed switching and low on-resistance using MagnaChip's advanced super junction technology. It has applications in power supply stages, motor controls, and DC-DC converters. Key parameters include a maximum drain-source voltage of 750V, on-resistance of 0.6Ω or less, threshold voltage of 3V typical, and continuous drain current of 7.3A.

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    MMD70R600P

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    The MMD70R600P is a 700V 0.6Ω N-channel MOSFET that provides low power loss through high-speed switching and low on-resistance using MagnaChip's advanced super junction technology. It has applications in power supply stages, motor controls, and DC-DC converters. Key parameters include a maximum drain-source voltage of 750V, on-resistance of 0.6Ω or less, threshold voltage of 3V typical, and continuous drain current of 7.3A.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    772 views10 pages

    MMD70R600P

    Uploaded by

    BoKi PoKi
    The MMD70R600P is a 700V 0.6Ω N-channel MOSFET that provides low power loss through high-speed switching and low on-resistance using MagnaChip's advanced super junction technology. It has applications in power supply stages, motor controls, and DC-DC converters. Key parameters include a maximum drain-source voltage of 750V, on-resistance of 0.6Ω or less, threshold voltage of 3V typical, and continuous drain current of 7.3A.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 10

    MMD70R600P Datasheet

    MMD70R600P
    700V 0.6 N-channel MOSFET
    Description
    MMD70R600P is power MOSFET using magnachips advanced super junction technology that can
    realize very low on-resistance and gate charge. It will provide much high efficiency by using
    optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to
    designers as well as low switching loss.

    Key Parameters

    Package & Internal Circuit

    Parameter

    Value

    Unit

    VDS @ Tj,max

    750

    RDS(on),max

    0.6

    VTH,typ

    ID

    7.3

    Qg,typ

    23

    nC

    G
    G

    Features

    Low Power Loss by High Speed Switching and Low On-Resistance

    100% Avalanche Tested

    Green Package Pb Free Plating, Halogen Free

    Applications

    PFC Power Supply Stages

    Switching Applications

    Adapter

    Motor Control

    DC DC Converters

    Ordering Information
    Order Code

    Marking

    Temp. Range

    Package

    Packing

    RoHS Status

    MMD70R600PRH

    70R600P

    -55 ~ 150

    TO-252

    Reel

    Halogen Free

    Jun. 2014 Revision 1.0

    MagnaChip Semiconductor Ltd.

    MMD70R600P Datasheet

    Absolute Maximum Rating (Tc=25 unless otherwise specified)


    Parameter

    Symbol

    Rating

    Unit

    Drain Source voltage

    VDSS

    700

    Gate Source voltage

    VGSS

    30

    7.3

    TC=25

    4.6

    TC=100

    Continuous drain current

    ID

    Pulsed drain current(1)

    IDM

    21.9

    Power dissipation

    PD

    71

    Single - pulse avalanche energy

    EAS

    142

    mJ

    MOSFET dv/dt ruggedness

    dv/dt

    50

    V/ns

    Diode dv/dt ruggedness

    dv/dt

    15

    V/ns

    Tstg

    -55 ~150

    Tj

    150

    Storage temperature
    Maximum operating junction
    temperature
    1)
    2)

    Note

    Pulse width tP limited by Tj,max


    ISD ID, VDS peak V(BR)DSS

    Thermal Characteristics
    Symbol

    Value

    Unit

    Thermal resistance, junction-case max

    Rthjc

    1.75

    /W

    Thermal resistance, junction-ambient max

    Rthja

    62.5

    /W

    Parameter

    Jun. 2014 Revision 1.0

    MagnaChip Semiconductor Ltd.

    MMD70R600P Datasheet

    Static Characteristics (Tc=25 unless otherwise specified)


    Parameter

    Symbol

    Min.

    Typ.

    Max.

    Unit

    Drain Source
    Breakdown voltage

    V(BR)DSS

    700

    VGS = 0V, ID=0.25mA

    VGS(th)

    VDS = VGS, ID=0.25mA

    Zero Gate Voltage


    Drain Current

    IDSS

    VDS = 700V, VGS = 0V

    Gate Leakage Current

    IGSS

    100

    nA

    VGS = 30V,

    RDS(ON)

    0.54

    0.6

    VGS = 10V, ID = 2.1A

    Gate Threshold Voltage

    Drain-Source On
    State Resistance

    Test Condition

    VDS =0V

    Dynamic Characteristics (Tc=25 unless otherwise specified)


    Parameter

    Symbol

    Min.

    Typ.

    Max.

    Input Capacitance

    Ciss

    681

    Output Capacitance

    Coss

    34.9

    Unit

    pF
    Reverse Transfer Capacitance

    Crss

    470

    Effective Output Capacitance


    Energy Related (3)

    Co(er)

    22

    Turn On Delay Time

    td(on)

    14.4

    tr

    27.6

    Rise Time
    Turn Off Delay Time

    td(off)

    68

    tf

    26

    Total Gate Charge

    Qg

    23

    Gate Source Charge

    Qgs

    4.3

    Gate Drain Charge

    Qgd

    13

    Gate Resistance

    RG

    3.2

    Fall Time

    Test Condition

    VDS = 25V, VGS = 0V,


    f = 1.0MHz

    VDS = 0V to 560V,
    VGS = 0V,f = 1.0MHz

    ns

    VGS = 10V, RG = 25,


    VDS = 350V, ID = 7.3A

    nC

    VGS = 10V, VDS =560V


    ID = 7.3A

    VGS = 0V, f = 1.0MHz

    3) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS

    Jun. 2014 Revision 1.0

    MagnaChip Semiconductor Ltd.

    MMD70R600P Datasheet

    Reverse Diode Characteristics (Tc=25 unless otherwise specified)


    Parameter

    Symbol

    Min.

    Typ.

    Max.

    Unit

    Continuous Diode Forward


    Current

    ISD

    7.3

    Diode Forward Voltage

    VSD

    1.4

    Reverse Recovery Time

    trr

    344

    ns

    Reverse Recovery Charge

    Qrr

    4.3

    Reverse Recovery Current

    Irrm

    13.4

    Jun. 2014 Revision 1.0

    Test Condition

    ISD = 7.3 A, VGS = 0 V

    ISD = 7.3 A
    di/dt = 100 A/s
    VDD = 100 V

    MagnaChip Semiconductor Ltd.

    MMD70R600P Datasheet

    Characteristic Graph

    Jun. 2014 Revision 1.0

    MagnaChip Semiconductor Ltd.

    MMD70R600P Datasheet

    Jun. 2014 Revision 1.0

    MagnaChip Semiconductor Ltd.

    MMD70R600P Datasheet

    Jun. 2014 Revision 1.0

    MagnaChip Semiconductor Ltd.

    MMD70R600P Datasheet
    Test Circuit
    Same type as DUT

    VGS

    Qg

    100K
    10V
    10V
    +

    Qgs

    VDS

    Qgd

    1mA

    DUT

    10V
    Charge

    Fig15-2. Gate charge waveform

    Fig15-1. Gate charge measurement circuit

    trr
    DUT

    IFM

    IF

    0.5 IRM

    +
    V
    - DS
    IS

    tb
    0.25 IRM

    di/dt

    Rg
    10K

    ta

    0.75 IRM

    IRM

    Same type as DUT

    VDD

    VR

    Vgs 15V

    VRM(REC)

    Fig16-1. Diode reverse recovery test circuit

    Fig16-1. Diode reverse recovery test waveform

    ID
    DUT

    VDS

    VDS
    Rg
    25

    90%

    RL

    Vgs

    10%

    tp

    +
    VDD
    VGS

    Td(on)

    tr

    Td(off)

    ton

    Fig17-1. Switching time test circuit for resistive load

    tf

    toff

    Fig17-2. Switching time waveform

    IAS
    DUT
    VDS

    BVDSS
    tp

    Rg
    L

    Vgs

    tAV
    IAS

    VDD
    tp

    VDS(t)

    +
    VDD
    Rds(on) * IAS

    Fig18-1. Unclamped inductive load test circuit

    Jun. 2014 Revision 1.0

    Fig18-2. Unclamped inductive waveform

    MagnaChip Semiconductor Ltd.

    MMD70R600P Datasheet
    Physical Dimensions
    TO-252 (D-PAK) , 3L
    Dimensions are in millimeters, unless otherwise specified

    Worldwide Sales Support Locations

    Jun. 2014 Revision 1.0

    MagnaChip Semiconductor Ltd.

    MMD70R600P Datasheet

    DISCLAIMER:
    The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
    generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
    expected to result in a personal injury. Sellers customers using or selling Sellers products for use in such
    applications do so at their own risk and agree to fully defend and indemnify Seller.

    MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
    for use of any circuitry other than circuitry entirely included in a MagnaChip product.
    is a registered trademark of MagnaChip
    Semiconductor Ltd.
    Jun. 2014 Revision 1.0

    10

    MagnaChip Semiconductor Ltd.

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