RRL - Schottky Diode Draft

SCHOTTKY DIODE

According to B. L. Sharma (1984), Schottky diodes, due to their fast rectifying

capability, can be used in Radio Frequency power detection circuits. [1] This fast
rectifying capability is defined by the Schottky diodes low turn on voltage, fast
recovery time and low junction capacitance characteristics. Comparing the Schottky
diode to a standard silicon diode, the latter is limited to a forward voltage drop of
the pn-junction rectifier of approximately 0.7-0.8 volts while the former can exhibit a
significantly low forward voltage at a given forward current and can turn on and off
faster than the latter due to its nature of being majority carrier devices, eliminating
the need for injection and extraction of minority carriers during transition between
states. The power loss of the standard silicon diode is therefore relatively
significant, approximately 20%-30%, compared to that of the Schottky diode. [2]
Commercially, silicon Schottky diodes offered can have four different barrier heights
defining the diodes sensitivity to very small signals: high barrier, medium barrier,
low barrier and zero bias detector barrier (ZBD). The first three types are generally
produced with n-type silicon while the ZBD is generated with p-type semiconductor
material. With the variable barrier height design, the Schottky diode is then ideal for
power detectors, which rectify very low levels of RF power to produce a DC output
voltage proportional to the RF input power. The diode may be operated at a small
DC bias (typically 50 A) which results in a relatively high RF impedance (typically
600 ). The simplest RF detector circuit is shown below:
In this circuit the Schottky detector diode rectifies the input RF signal and
charges the output filters capacitor to a voltage that is proportional to the input
signal amplitude. The square law detection region and the linear detection region
defines the transfer function of the circuit, where the transition level between
regions is proportional to the barrier height of the Schottky diode. [3]

Bibliography
[1] B. L. Sharma, "Metal-semiconductor Schottky barrier junctions and their
application," Plenum Press, New York and London, 1984.
[2] Cory, R. (2009). Schottky Diodes. MPDigest.
[3] Wu, K. (n.d.). Introduction To SCHOTTKY Rectifier and Application Guidelines.

2013: Premier Farnell plc.
Detector diodes are designed to rectify very low levels of RF power to produce a DC
output voltage proportional to the RF input power. The diode may be operated at a
small DC bias (typically 50 A) which results in a relatively high RF impedance
(typically 600 ). Very low diode capacitance is required to achieve high sensitivity. Since the detected output can be at a very low level, the low frequency
(audio) excess noise (1/f noise) is an impor- tant consideration.
Schottky diodes due to their high operating frequency, fast switching speed
and low forward voltage drop have been widely used in RF power detection
circuits, mixers and low-voltage reference circuits
Schottky diodes are known as fast rectifying devices and can be used as RF
power detectors
Single balanced mixers in coplanar architecture re,pire in their simples:
configuration only two Schottky diodes as active elements. The main
advantages are, among others, low conversion loss and the suppressing of
LO noise sidebands [2], [3]. Schottky diodes for mixer applications need a
very high cut-off frequency, ideally much higher than the operating
frequency. By reducing the barrier height of the Schottky diodes it is
possible.to operate the mixer without DC bias voltage
Schottky diodes are known as fast rectifying devices and can be used as RF
power detectors
B. L. Sharma, "Metal-semiconductor Schottky barrier junctions and their

application," Plenum Press, New York and London, 1984.
From: http://www.radioelectronics.com/info/data/semicond/schottky_diode/schottky_barrier_diode.php
Advantages
Schottky diodes are used in many applications where other types of diode will not
perform as well. They offer a number of advantages:
Low turn on voltage: The turn on voltage for the diode is between 0.2 and
0.3 volts for a silicon diode against 0.6 to 0.7 volts for a standard silicon
diode. This makes it have very much the same turn on voltage as a
germanium diode.
Fast recovery time: The fast recovery time because of the small amount
of stored charge means that it can be used for high speed switching
applications.
Low junction capacitance: In view of the very small active area, often as
a result of using a wire point contact onto the silicon, the capacitance levels
are very small.
The advantages of the Schottky diode, mean that its performance can far exceed
that of other diodes in many areas.
Applications
The Schottky barrier diodes are widely used in the electronics industry finding many
uses as diode rectifier. Its unique properties enable it to be used in a number of
applications where other diodes would not be able to provide the same level of
performance. In particular it is used in areas including:
RF mixer and detector diode: The Schottky diode has come into its own
for radio frequency applications because of its high switching speed and high
frequency capability. In view of this Schottky barrier diodes are used in many
high performance diode ring mixers. In addition to this their low turn on
voltage and high frequency capability and low capacitance make them ideal
as RF detectors.
Power rectifier: Schottky barrier diodes are also used in high power
applications, as rectifiers. Their high current density and low forward voltage
drop mean that less power is wasted than if ordinary PN junction diodes were
used. This increase in efficiency means that less heat has to be dissipated,
and smaller heat sinks may be able to be incorporated in the design.

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SCHOTTKY DIODE

According to B. L. Sharma (1984), Schottky diodes, due to their fast rectifying

[3] Wu, K. (n.d.). Introduction To SCHOTTKY Rectifier and Application Guidelines.

B. L. Sharma, "Metal-semiconductor Schottky barrier junctions and their

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