polyfet rf devices

L2801

General Description
Silicon VDMOS and LDMOS
transistors designed specifically SILICON GATE ENHANCEMENT MODE
for broadband RF applications.
Suitable for Militry Radios,
RF POWER LDMOS TRANSISTOR
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI, 15.0 Watts Single Ended
Laser Driver and others.
TM Package Style S02
"Polyfet" process features
low feedback and output capacitances
resulting in high F t transistors with high
HIGH EFFICIENCY, LINEAR
input impedance and high efficiency. HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Junction to Maximum Storage DC Drain Drain to Drain to Gate to
Device Case Thermal Junction Temperature Current Gate Source Source
Dissipation Resistance Temperature Voltage Voltage Voltage
o o o o
50 Watts 3.40 C/W 200 C -65 C to 150 C 3.0 A 70 V 70 V 20 V

RF CHARACTERISTICS ( 15.0 WATTS OUTPUT )

SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS

Gps Common Source Power Gain 12 dB Idq = 0.40 A, Vds = 28.0 V, F = 1,000 MHz

η Drain Efficiency 55 % Idq = 0.40 A, Vds = 28.0 V, F = 1,000 MHz

VSWR Load Mismatch Tolerance 20:1 Relative Idq = 0.40 A, Vds = 28.0 V, F = 1,000 MHz

ELECTRICAL CHARACTERISTICS ( EACH SIDE )

SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS

Bvdss Drain Breakdown Voltage 65 V Ids = 0.10 mA, Vgs = 0V

Idss Zero Bias Drain Current 1.0 mA Vds = 28.0 V, Vgs = 0V

Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V

Vgs Gate Bias for Drain Current 1 7 V Ids = 0.10 A, Vgs = Vds

gM Forward Transconductance 0.8 Mho Vds = 10V, Vgs = 5V

Rdson Saturation Resistance 0.90 Ohm Vgs = 20V, Ids = 2.50 A

Idsat Saturation Current 5.50 Amp Vgs = 20V, Vds = 10V

Ciss Common Source Input Capacitance 30.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz

Crss Common Source Feedback Capacitance 1.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz

Coss Common Source Output Capacitance 15.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz

POLYFET RF DEVICES REVISION 04/27/2001

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
L2801

POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE

L2801 POUT VS PIN F=1000 MHZ; IDQ=0.4A; VDS=28V L2B 1 DIE CAPACITANCE

100

22 16.00

20 Ciss
18 14.00 10

16
Coss

14 12.00

1 Crss
12

10 10.00
Efficiency = 55%
8
0.1
6 8.00
0 5 10 15 20 25 30
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
PIN IN WATTS VDS IN VOLTS
POUT GAIN

IV CURVE ID & GM VS VGS

L2B 1 DIE ID, GM vs VG
L2A 1 DICE IV 100
6

4 10
ID
ID IN AMPS

2
1

1 GM

0
0 2 4 6 8 10 12 14 16 18 20
0.1
VDS IN VOLTS
0 2 4 6 8 10 12 14
vg=2v Vg=4v Vg=6v vg=8v vg=10v vg=12v
Vgs in Volts

Zin Zout PACKAGE DIMENSIONS IN INCHES

Tolerance .XX +/-0.01 .XXX +/-.005 inches

POLYFET RF DEVICES REVISION 04/27/2001

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com